Memory

Part Number	Description / PDF	Quantity
AT25080B-MAHL-T Roving Networks / Microchip Technology	IC EEPROM 8KBIT SPI 20MHZ 8UDFN	2048
N25Q032A13EF640F Alliance Memory, Inc.	IC FLSH 32MBIT SPI 108MHZ 8WPDFN	3312
CY7C2563KV18-400BZXI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	29
S25FL064P0XMFI001 Flip Electronics	IC FLASH 64MBIT SPI/QUAD 16SOIC	15186
BR24T16FJ-WE2 ROHM Semiconductor	IC EEPROM 16KBIT I2C 8SOPJ	3164
70V3379S6BF Renesas Electronics America	IC SRAM 576KBIT PAR 208CABGA	0
CY7C1514V18-167BZC IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	576
BR93L76RF-WE2 ROHM Semiconductor	IC EEPROM 8KBIT SPI 2MHZ 8SOP	2487
NSEC00K004-IT Insignis Technology Corporation	IC FLASH 32GBIT EMMC 100BGA	61
24LC128-E/MS Roving Networks / Microchip Technology	IC EEPROM 128KBIT I2C 8MSOP	0
RM24C64C-LTAI-B Adesto Technologies	IC CBRAM 64KBIT I2C 1MHZ 8TSSOP	0
93LC76CT-E/ST Roving Networks / Microchip Technology	IC EEPROM 8KBIT SPI 3MHZ 8TSSOP	0
MX29LV160DBTI-70G Macronix	IC FLASH 16MBIT PARALLEL 48TSOP	0
IS62WV102416BLL-25MLI-TR ISSI (Integrated Silicon Solution, Inc.)	IC SRAM 16MBIT PAR 48MINIBGA	0
CY62148EV30LL-55ZSXE IR (Infineon Technologies)	IC SRAM 4MBIT PARALLEL 32SOIC	1179
71V30S55TFG Renesas Electronics America	IC SRAM 8KBIT PARALLEL 64TQFP	39
71V321L35PFGI8 Renesas Electronics America	IC SRAM 16KBIT PARALLEL 64TQFP	0
IS61DDP2B41M18A-400M3L ISSI (Integrated Silicon Solution, Inc.)	IC SRAM 18MBIT PARALLEL 165LFBGA	0
S29GL128N11TFVR10 IR (Infineon Technologies)	IC FLASH 128MBIT PARALLEL 56TSOP	91
NM24C03FLZEM8	IC EEPROM 2KBIT I2C 400KHZ 8SO	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)