Memory

Part Number	Description / PDF	Quantity
S29GL256S10DHB020 IR (Infineon Technologies)	IC FLASH 256MBIT PARALLEL 64FBGA	50
IS61WV5128EDBLL-10BLI ISSI (Integrated Silicon Solution, Inc.)	IC SRAM 4MBIT PARALLEL 36TFBGA	240
IS25WP064A-RHLE-TR ISSI (Integrated Silicon Solution, Inc.)	IC FLASH 64MBIT SPI/QUAD 24TFBGA	0
70V658S10DRG Renesas Electronics America	IC SRAM 2MBIT PARALLEL 208PQFP	0
AS6C6416-55BIN Alliance Memory, Inc.	IC SRAM 64MBIT PARALLEL 48TFBGA	74
71V65703S75BQG Renesas Electronics America	IC SRAM 9MBIT PARALLEL 165CABGA	0
RD28F1604C3TD70SB93	IC FLASH RAM 16MBIT PAR 66SCSP	37
IS43DR86400E-25DBLI ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 512MBIT PARALLEL 60TWBGA	0
SST25WF080BT-40E/SN Roving Networks / Microchip Technology	IC FLASH 8MBIT SPI 80MHZ 8SOIC	0
MT28EW128ABA1HJS-0SIT Micron Technology	IC FLASH 128MBIT PARALLEL 56TSOP	0
CY62157EV30LL-45ZXI Cypress Semiconductor	IC SRAM 8MBIT PARALLEL 48TSOP I	519
CY7C1565KV18-450BZXI IR (Infineon Technologies)	IC SRAM 72MBIT PARALLEL 165FBGA	819
71V67602S133PFGI Renesas Electronics America	IC SRAM 9MBIT PARALLEL 100TQFP	0
AS7C34096A-15JCN Alliance Memory, Inc.	IC SRAM 4MBIT PARALLEL 36SOJ	0
24LC1026T-E/SN Roving Networks / Microchip Technology	IC EEPROM 1MBIT I2C 400KHZ 8SOIC	0
M25P05-AVMN6P STMicroelectronics	FLASH, 64KX8, PDSO8	1436566
S71KL256SC0BHB003 Cypress Semiconductor	IC FLASH RAM 256MBIT PAR 24FBGA	0
71V67703S85PFG8 Renesas Electronics America	IC SRAM 9MBIT PARALLEL 100TQFP	0
S25FL256LAGNFN011 Cypress Semiconductor	IC FLASH 256MBIT SPI/QUAD 8WSON	0
IS42VM16400M-75BLI ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 64MBIT PARALLEL 54TFBGA	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)