Memory

Part Number	Description / PDF	Quantity
M95040-WDW6TP STMicroelectronics	IC EEPROM 4KBIT SPI 20MHZ 8TSSOP	113
UPD44645092AF5-E40-FQ1-A Renesas Electronics America	STANDARD SRAM, 8MX9, 0.45NS	420
70T3509MS133BPGI Renesas Electronics America	IC SRAM 36MBIT PARALLEL 256CABGA	12
AT28BV256-20TU Roving Networks / Microchip Technology	IC EEPROM 256KBIT PAR 28TSOP	0
CY62147CV33LL-70BVI Rochester Electronics	STANDARD SRAM, 256KX16, 70NS	2012
25AA080T/SN Roving Networks / Microchip Technology	IC EEPROM 8KBIT SPI 1MHZ 8SOIC	0
IS61LV25616AL-10TL-TR ISSI (Integrated Silicon Solution, Inc.)	IC SRAM 4MBIT PARALLEL 44TSOP II	1508
GD25VE40CSIG GigaDevice	IC FLASH 4MBIT SPI/QUAD I/O 8SOP	0
RM24C256C-LSNI-T Adesto Technologies	IC CBRAM 256KBIT I2C 1MHZ 8SOIC	0
UPD44325362BF5-E50-FQ1-A Renesas Electronics America	QDR SRAM, 1MX36, 0.45NS	0
GS816018DGT-333I GSI Technology	IC SRAM 18MBIT PARALLEL 100TQFP	36
24LC128-E/MF Roving Networks / Microchip Technology	IC EEPROM 128KBIT I2C 8DFN	0
CY7C1518KV18-250BZXC IR (Infineon Technologies)	DDR SRAM, 4MX18, 0.45NS PBGA165	631
24AA32AT/SM Roving Networks / Microchip Technology	IC EEPROM 32KBIT I2C 8SOIJ	0
71V321L25JG Renesas Electronics America	IC SRAM 16KBIT PARALLEL 52PLCC	0
CAT25040S-TE13	IC EEPROM 4KBIT SPI 10MHZ 8SOIC	2000
R1LV3216RSD-5SR#S0 Renesas Electronics America	STANDARD SRAM, 2MX16, 55NS	1000
6116SA45TDB Renesas Electronics America	IC SRAM 16KBIT PARALLEL 24CDIP	35
AS4C128M8D3LB-12BINTR Alliance Memory, Inc.	IC DRAM 1GBIT PARALLEL 78FBGA	0
CAT24M01XI	IC EEPROM 1MBIT I2C 1MHZ 8SOIC	2754

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)