Memory

Part Number	Description / PDF	Quantity
W25Q32JVSSIQ TR Winbond Electronics Corporation	IC FLASH 32MBIT SPI/QUAD 8SOIC	10722
SST39LF402C-55-4C-MAQE Roving Networks / Microchip Technology	IC FLASH 4MBIT PARALLEL 48WFBGA	0
71V67602S150PFI	IC SRAM 9MBIT PARALLEL 100TQFP	68
S-24C32CI-T8T1U3 ABLIC U.S.A. Inc.	IC EEPROM 32KBIT I2C 8TSSOP	232
IS43R86400D-6BL ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 512MBIT PARALLEL 60TFBGA	0
IS42S16320D-6TLI-TR ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 512MBIT PAR 54TSOP II	0
S-93C66BD0I-T8T1G ABLIC U.S.A. Inc.	IC EEPROM 4KBIT SPI 2MHZ 8TSSOP	0
QS8888-15P	CACHE TAG SRAM, 16KX4, 15NS	0
S-25A640B0A-J8T2U3 ABLIC U.S.A. Inc.	IC EEPROM 64KBIT SPI 8SOPJ	3982
24LC01BT-I/SN Roving Networks / Microchip Technology	IC EEPROM 1KBIT I2C 400KHZ 8SOIC	812
CY7C1046BV33-12VC Rochester Electronics	STANDARD SRAM, 1MX4, 12NS	63
NM24C65UEM8	IC EEPROM 64KBIT I2C 8SOIC	0
IS66WVE2M16EALL-70BLI ISSI (Integrated Silicon Solution, Inc.)	IC PSRAM 32MBIT PARALLEL 48TFBGA	118
70V658S10BC8 Renesas Electronics America	IC SRAM 2MBIT PARALLEL 256CABGA	0
GD25LQ40COIGR GigaDevice	IC FLASH 4MBIT SPI/QUAD 8TSSOP	0
W9751G6NB-25 Winbond Electronics Corporation	IC DRAM 512MBIT PARALLEL 84VFBGA	175
93C46A-E/MS Roving Networks / Microchip Technology	IC EEPROM 1KBIT SPI 2MHZ 8MSOP	0
UPD46364362BF1-E40Y-EQ1-A Renesas Electronics America	DDR SRAM, 1MX36, 0.45NS	227
S29GL032N90FFIS20 Cypress Semiconductor	IC FLASH 32MBIT PARALLEL 64FBGA	720
CY7C1320KV18-300BZXC IR (Infineon Technologies)	IC SRAM 18MBIT PARALLEL 165FBGA	1671

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)