Memory

Part Number	Description / PDF	Quantity
GS81282Z36GB-250I GSI Technology	IC SRAM 144MBIT PAR 119FPBGA	0
71V416S15BE Renesas Electronics America	IC SRAM 4MBIT PARALLEL 48CABGA	0
NM24C17N	IC EEPROM 16KBIT I2C 100KHZ 8DIP	0
PALC16R8-30DM Rochester Electronics	ELECTRICALLY ERASABLE PAL DEVIC	59
24AA256UID-I/P Roving Networks / Microchip Technology	IC EEPROM 256KBIT I2C 8DIP	323
S70FL256P0XMFI003 Cypress Semiconductor	IC FLASH 256MBIT SPI/QUAD 16SOIC	2900
IS46DR16320E-3DBLA2-TR ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 512MBIT PARALLEL 84TWBGA	0
71V35761S200BGGI Renesas Electronics America	IC SRAM 4.5MBIT PARALLEL 119PBGA	0
AS4C64M8D3-12BINTR Alliance Memory, Inc.	IC DRAM 512MBIT PARALLEL 78FBGA	0
AS4C64M16D3LB-12BAN Alliance Memory, Inc.	IC DRAM 1GBIT PARALLEL 96FBGA	0
IS42S32400F-7TL ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 128MBIT PAR 86TSOP II	0
S29JL032H90TAI310	FLASH, 2MX16, 90NS, PDSO48	714
IS46DR16128C-3DBLA1-TR ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 2GBIT PARALLEL 84TWBGA	0
70T651S12BF8 Renesas Electronics America	IC SRAM 9MBIT PARALLEL 208CABGA	0
CY7C1020CV33-15ZC IR (Infineon Technologies)	IC SRAM 512KBIT PAR 44TSOP II	0
FM24C09UN	IC EEPROM 8KBIT I2C 100KHZ 8DIP	1000
S29GL01GS10FHSS43 Cypress Semiconductor	IC FLASH 1GBIT PARALLEL 64FBGA	0
CY7C1347B-100AC Rochester Electronics	IC SRAM 4.5MBIT PARALLEL 100TQFP	3613
AT25XE041B-MHN-T Adesto Technologies	IC FLASH 4MBIT SPI 85MHZ 8UDFN	0
CAT25010YI-GT3 Sanyo Semiconductor/ON Semiconductor	IC EEPROM 1KBIT SPI 20MHZ 8TSSOP	4180

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)