Memory

Part Number	Description / PDF	Quantity
M24512-DRMN3TP/K STMicroelectronics	IC EEPROM 512KBIT I2C 1MHZ 8SO	69
FM24C256FLEM8X	IC EEPROM 256KBIT I2C 400KHZ 8SO	0
S-25C020A0I-T8T1U ABLIC U.S.A. Inc.	IC EEPROM 2KBIT SPI 5MHZ 8TSSOP	0
IS43R16160D-6BL-TR ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 256MBIT PARALLEL 60TFBGA	0
S-24C128CI-J8T1U3 ABLIC U.S.A. Inc.	IC EEPROM 128KBIT I2C 8SOP	3828
IS42S16160J-6BLI-TR ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 256MBIT PARALLEL 54TFBGA	0
CY7C1006B-15VCT Rochester Electronics	STANDARD SRAM, 256KX4, 15NS	5000
CY14B116N-BZ25XI Cypress Semiconductor	NO WARRANTY	71
CY62156ESL-45BVXIT Cypress Semiconductor	IC SRAM 8MBIT PARALLEL 48VFBGA	0
EM68B16CWQK-25H Etron Technology	IC DRAM 512MBIT PARALLEL 84FBGA	0
IS45S16320F-6TLA1-TR ISSI (Integrated Silicon Solution, Inc.)	IC DRAM 512MBIT PAR 54TSOP II	0
71T75602S166BGG Renesas Electronics America	IC SRAM 18MBIT PARALLEL 119PBGA	0
CY14B104NA-BA25XIT Cypress Semiconductor	IC NVSRAM 4MBIT PARALLEL 48FBGA	0
GD25Q80CSIGR GigaDevice	IC FLASH 8MBIT SPI/QUAD I/O 8SOP	15425
MT47H128M16RT-25E AIT:C Micron Technology	IC DRAM 2GBIT PARALLEL 84FBGA	0
MX25U25645GMI00 Macronix	IC FLASH 256MBIT SPI/QUAD 16SOP	398
M5M5V108DKV-70H#ST Renesas Electronics America	SRAM 1M-BIT (128K X 8)	240000
71124S20YGI Renesas Electronics America	IC SRAM 1MBIT PARALLEL 32SOJ	0
M24C32-DFDW6TP STMicroelectronics	IC EEPROM 32KBIT I2C 1MHZ 8TSSOP	7000
CAT24C256WI-G	IC EEPROM 256KBIT I2C 1MHZ 8SOIC	14086

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)