Memory

Part Number	Description / PDF	Quantity
71V124SA12TYG8 Renesas Electronics America	IC SRAM 1MBIT PARALLEL 32SOJ	0
S27KL0641DABHA033 Cypress Semiconductor	IC PSRAM 64MBIT PARALLEL 24FBGA	0
S25FL128SDPMFV013 Cypress Semiconductor	IC FLASH 128MBIT SPI/QUAD 16SOIC	0
W988D2FBJX6I TR Winbond Electronics Corporation	IC DRAM 256MBIT PARALLEL 90VFBGA	0
IS25LP016D-JKLE ISSI (Integrated Silicon Solution, Inc.)	IC FLASH 16MBIT SPI/QUAD 8WSON	0
IS66WVH8M8ALL-166B1LI ISSI (Integrated Silicon Solution, Inc.)	IC PSRAM 64MBIT PARALLEL 24TFBGA	0
CY7C1355C-133AXC Cypress Semiconductor	IC SRAM 9MBIT PARALLEL 100TQFP	1
SST26VF064BEUI-104I/MF Roving Networks / Microchip Technology	IC FLASH 64MBIT SPI/QUAD 8WDFN	0
IS66WVE2M16ECLL-70BLI ISSI (Integrated Silicon Solution, Inc.)	IC PSRAM 32MBIT PARALLEL 48TFBGA	340
24VL014T/SN Roving Networks / Microchip Technology	IC EEPROM 1KBIT I2C 400KHZ 8SOIC	0
71V65603S150BGG8 Renesas Electronics America	IC SRAM 9MBIT PARALLEL 119PBGA	0
QS7025A-35TF	IC SRAM 128KBIT 28MHZ	122
BR24T32FJ-WE2 ROHM Semiconductor	IC EEPROM 32KBIT I2C 8SOPJ	2148
25LC640AT-M/SN Roving Networks / Microchip Technology	IC EEPROM 64KBIT SPI 10MHZ 8SOIC	0
AT28HC256-90JU-600 Roving Networks / Microchip Technology	IC EEPROM 256KBIT PAR 32PLCC	84
71V65803S100BGG Renesas Electronics America	IC SRAM 9MBIT PARALLEL 119PBGA	116
CY7C1426KV18-300BZCT Cypress Semiconductor	IC SRAM 36MBIT PARALLEL 165FBGA	0
71V256SA20PZG8 Renesas Electronics America	IC SRAM 256KBIT PARALLEL 28TSOP	0
BR24L04FVM-WTR ROHM Semiconductor	IC EEPROM 4KBIT I2C 400KHZ 8MSOP	1594
24LC01BHT-E/SN Roving Networks / Microchip Technology	IC EEPROM 1KBIT I2C 400KHZ 8SOIC	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)