Memory

Part Number	Description / PDF	Quantity
MT54V1MH18EF-7.5 Micron Technology	QDR SRAM, 1MX18, 3NS PBGA165	0
IS64LF12832EC-7.5TQLA3 ISSI (Integrated Silicon Solution, Inc.)	IC SRAM 4MBIT PARALLEL 100LQFP	0
71V2576S150PFI	IC SRAM 4.5MBIT PARALLEL 100TQFP	0
STK14D88-NF45I IR (Infineon Technologies)	NON-VOLATILE SRAM, 32KX8, 45NS P	1036
CY7C1381KV33-133AXIT Cypress Semiconductor	IC SRAM 18MBIT PARALLEL 100TQFP	0
RM24C256C-LTAI-B Adesto Technologies	IC CBRAM 256KBIT I2C 1MHZ 8TSSOP	0
BR25010N-10SU-1.8 ROHM Semiconductor	IC EEPROM 1KBIT SPI 3MHZ 8SOIC	0
CY14B104L-BA20XC IR (Infineon Technologies)	IC NVSRAM 4MBIT PARALLEL 48FBGA	299
MT47H128M16RT-25E AAT:C TR Micron Technology	IC DRAM 2GBIT PARALLEL 84FBGA	855
FM25040B-GA Flip Electronics	IC FRAM 4KBIT SPI 14MHZ 8SOIC	0
71V3577S85BG8 Renesas Electronics America	IC SRAM 4.5MBIT PARALLEL 119PBGA	0
AT24C01C-SSHM-B Roving Networks / Microchip Technology	IC EEPROM 1KBIT I2C 1MHZ 8SOIC	1938
FM24CL16B-DGTR Cypress Semiconductor	IC FRAM 16KBIT I2C 1MHZ 8TDFN	0
CY7C1020D-10ZSXIT Cypress Semiconductor	IC SRAM 512KBIT PAR 44TSOP II	0
70V657S12BF8 Renesas Electronics America	IC SRAM 1.125MBIT PAR 208CABGA	0
CY7C131-30NC Rochester Electronics	DUAL-PORT SRAM, 1KX8	455
CY27C256-55WC	UVPROM, 32KX8, 55NS	29118
S29GL128P11FAI020 Cypress Semiconductor	IC FLASH 128MBIT PARALLEL 64FBGA	0
CY62147EV30LL-55ZSXE IR (Infineon Technologies)	IC SRAM 4MBIT PARALLEL 44TSOP II	0
AS4C64M16D2A-25BIN Alliance Memory, Inc.	IC DRAM 1GBIT PARALLEL 84FBGA	675

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)