Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
FP30R07U1E4BPSA1

FP30R07U1E4BPSA1

IR (Infineon Technologies)

IGBT MODULE 650V 50A 160W

0

FS20R06XL4BOMA1

FS20R06XL4BOMA1

IR (Infineon Technologies)

IGBT MODULE 600V 26A 89W EASY

0

IRG7T300CL12B

IRG7T300CL12B

IR (Infineon Technologies)

IGBT MOD 1200V 570A POWIR 62

0

FZ3600R17KE3B2NOSA1

FZ3600R17KE3B2NOSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 3600A

0

BSM300GB60DLCE3256HDLA1

BSM300GB60DLCE3256HDLA1

IR (Infineon Technologies)

IGBT MODULE 2 MED POWER

0

FD800R33KL2CKB5NOSA1

FD800R33KL2CKB5NOSA1

IR (Infineon Technologies)

IGBT MOD 3300V 1500A 9800W

0

IRG5K50FF06E

IRG5K50FF06E

IR (Infineon Technologies)

IGBT MOD 600V 100A POWIR ECO 2

0

FB20R06W1E3B11BPSA1

FB20R06W1E3B11BPSA1

IR (Infineon Technologies)

IGBT MODULE 600V 20A

0

IRDM983-025MBTR

IRDM983-025MBTR

IR (Infineon Technologies)

IGBT MODULE MOTION CTLR 40QFN

0

FP20R06KL4BOMA1

FP20R06KL4BOMA1

IR (Infineon Technologies)

MOD IGBT LOW PWR EASY2-1

0

IRG7T75HF12A

IRG7T75HF12A

IR (Infineon Technologies)

IGBT MOD 1200V 150A POWIR 34

0

BSM150GT120DN2BOSA1

BSM150GT120DN2BOSA1

IR (Infineon Technologies)

IGBT MODULE 1200V

0

4PS03012S43G30699NOSA1

4PS03012S43G30699NOSA1

IR (Infineon Technologies)

IGBT MODULE STACK A-PS3-1

0

FZ1200R12KF5NOSA1

FZ1200R12KF5NOSA1

IR (Infineon Technologies)

IGBT MODULE 1200V 1200A

0

FZ1200R33KL2CB5NOSA1

FZ1200R33KL2CB5NOSA1

IR (Infineon Technologies)

IGBT MODULE 3300V 2300A

0

HIGFED1BOSA1

HIGFED1BOSA1

IR (Infineon Technologies)

MODULE IGBT HYBRID PK

0

BSM50GD170DLBOSA1

BSM50GD170DLBOSA1

IR (Infineon Technologies)

IGBT MOD 1700V 100A 480W

0

IRG5U50HH12E

IRG5U50HH12E

IR (Infineon Technologies)

IGBT MOD 1200V 85A POWIR ECO 2

0

FS100R12KT4GPBPSA1

FS100R12KT4GPBPSA1

IR (Infineon Technologies)

MOD IGBT LOW PWR ECONO3-4

0

IRG5K100HH06E

IRG5K100HH06E

IR (Infineon Technologies)

IGBT MOD 600V 170A POWIR ECO 2

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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