Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
FZ1200R12KF4NOSA1

FZ1200R12KF4NOSA1

IR (Infineon Technologies)

IGBT MODULE 1200V 1200A

0

IRG5U400SD12B

IRG5U400SD12B

IR (Infineon Technologies)

IGBT MOD 1200V 600A POWIR 62

0

FP30R06YE3BOMA1

FP30R06YE3BOMA1

IR (Infineon Technologies)

MODULE IGBT CBI E2

0

IRDM983-025MB

IRDM983-025MB

IR (Infineon Technologies)

IGBT MODULE MOTION CTLR 40QFN

0

IRG5K75HF12A

IRG5K75HF12A

IR (Infineon Technologies)

IGBT MOD 1200V 150A POWIR 34

0

IRG7T300CH12B

IRG7T300CH12B

IR (Infineon Technologies)

IGBT MOD 1200V 570A POWIR 62

0

FS10R06VL4B2BOMA1

FS10R06VL4B2BOMA1

IR (Infineon Technologies)

IGBT MODULE LOW PWR EASY750-1

0

IFS200V12PT4BOSA1

IFS200V12PT4BOSA1

IR (Infineon Technologies)

IGBT MODULE 1200V 200A

0

IRG5K200HF06A

IRG5K200HF06A

IR (Infineon Technologies)

IGBT MOD 600V 340A 800W POWIR 34

0

IRG5U200SD12B

IRG5U200SD12B

IR (Infineon Technologies)

IGBT MOD 1200V 320A POWIR 62

0

FZ1600R12KL4CNOSA1

FZ1600R12KL4CNOSA1

IR (Infineon Technologies)

IGBT MODULE 1200V 1600A

0

IRG5U75HF12A

IRG5U75HF12A

IR (Infineon Technologies)

IGBT MOD 1200V 130A POWIR 34

0

FZ1200R12KL4CNOSA1

FZ1200R12KL4CNOSA1

IR (Infineon Technologies)

IGBT MODULE 1200V 1200A

0

BSM20GP60BOSA1

BSM20GP60BOSA1

IR (Infineon Technologies)

IGBT MODULE 600V 35A 130W

0

FF400R33KF2CB3NOSA1

FF400R33KF2CB3NOSA1

IR (Infineon Technologies)

IGBT MOD 3300V 660A AIHV130-3

0

IRG5U75HH12E

IRG5U75HH12E

IR (Infineon Technologies)

IGBT MOD 1200V 130A POWIR ECO 2

0

IRG5U100HF12B

IRG5U100HF12B

IR (Infineon Technologies)

IGBT MOD 1200V 180A POWIR 62

0

FB20R06KL4B1BOMA1

FB20R06KL4B1BOMA1

IR (Infineon Technologies)

IGBT MODULE LOW PWR EASY2-1

0

FZ1200R33KL2CNOSA1

FZ1200R33KL2CNOSA1

IR (Infineon Technologies)

IGBT MODULE 3300V 2300A

0

IRG7U100HF12B

IRG7U100HF12B

IR (Infineon Technologies)

IGBT MOD 1200V 200A POWIR 62

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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