Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
FB10R06KL4GB1BOMA1

FB10R06KL4GB1BOMA1

IR (Infineon Technologies)

MOD IGBT LOW PWR EASY2-1

0

IRG5W50HF06A

IRG5W50HF06A

IR (Infineon Technologies)

IGBT MOD 600V 75A 260W POWIR 34

0

FF600R12IS4FBOSA1

FF600R12IS4FBOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 600A 3700W

0

BSM10GP120B9BOSA1

BSM10GP120B9BOSA1

IR (Infineon Technologies)

IGBT MODULE 1200V

0

IRG5K200HF12B

IRG5K200HF12B

IR (Infineon Technologies)

IGBT MOD 1200V 400A POWIR 62

0

IRG5K200HF06B

IRG5K200HF06B

IR (Infineon Technologies)

IGBT MOD 600V 340A 800W POWIR 62

0

DF200R12W1H3FB11BPSA1

DF200R12W1H3FB11BPSA1

IR (Infineon Technologies)

IGBT MOD DIODE BRDG EASY1B-2-1

0

FF800R17KF6CB2NOSA1

FF800R17KF6CB2NOSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 6250W

0

IRG5U150HF06A

IRG5U150HF06A

IR (Infineon Technologies)

IGBT MOD 600V 200A 660W POWIR 34

0

FZ1600R12KF4S1NOSA1

FZ1600R12KF4S1NOSA1

IR (Infineon Technologies)

IGBT MODULE 1200V AIHM130-2

0

IRG5K75FF06E

IRG5K75FF06E

IR (Infineon Technologies)

IGBT MOD 600V 140A POWIR ECO 2

0

IRG7T300SD12B

IRG7T300SD12B

IR (Infineon Technologies)

IGBT MOD 1200V 600A POWIR 62

0

FB15R06KL4B1BOMA1

FB15R06KL4B1BOMA1

IR (Infineon Technologies)

MOD IGBT LOW PWR EASY2-1

0

FZ1200R33KF2CNOSA4

FZ1200R33KF2CNOSA4

IR (Infineon Technologies)

IGBT MODULE 3300V 2000A

0

IRG5U300SD12B

IRG5U300SD12B

IR (Infineon Technologies)

IGBT MOD 1200V 480A POWIR 62

0

FD600R12KF4NOSA1

FD600R12KF4NOSA1

IR (Infineon Technologies)

IGBT MODULE 1200V 600A

0

FF1200R17KE3B2NOSA1

FF1200R17KE3B2NOSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 1200A

0

BSM300GB60DLCHOSA1

BSM300GB60DLCHOSA1

IR (Infineon Technologies)

IGBT MOD 600V 375A 1250W

0

IRG5K300HF06B

IRG5K300HF06B

IR (Infineon Technologies)

IGBT MOD 600V 480A POWIR 62

0

IRG7T300HF12B

IRG7T300HF12B

IR (Infineon Technologies)

IGBT MOD 1200V 570A POWIR 62

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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