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Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
BSM100GD60DLCBDLA1

BSM100GD60DLCBDLA1

IR (Infineon Technologies)

IGBT MOD 600V 130A 430W

0
BSM50GP60BOSA1

BSM50GP60BOSA1

IR (Infineon Technologies)

IGBT MODULE 600V 70A 250W

0
F4200R06KL4BOSA1

F4200R06KL4BOSA1

IR (Infineon Technologies)

IGBT MOD 600V 225A 695W

0
FF45R12W1J1B11BPSA1

FF45R12W1J1B11BPSA1

IR (Infineon Technologies)

IGBT MODULE 1200V 45A EASY1B

0
IRG7U100HF12A

IRG7U100HF12A

IR (Infineon Technologies)

IGBT MOD 1200V 200A POWIR 34

0
IRG5K150HF12B

IRG5K150HF12B

IR (Infineon Technologies)

IGBT MOD 1200V 300A POWIR 62

0
FS75R12KE3_B3

FS75R12KE3_B3

IR (Infineon Technologies)

IGBT MOD 1200V 100A 355W

0
FP15R06KL4BOMA1

FP15R06KL4BOMA1

IR (Infineon Technologies)

MOD IGBT LOW PWR EASY2-1

0
BSM25GP120B2BOSA1

BSM25GP120B2BOSA1

IR (Infineon Technologies)

IGBT MODULE 1200V

0
IRG7T200CL12B

IRG7T200CL12B

IR (Infineon Technologies)

IGBT MOD 1200V 390A POWIR 62

0
IRG5U200HF12B

IRG5U200HF12B

IR (Infineon Technologies)

IGBT MOD 1200V 285A POWIR 62

0
FP10R06KL4BOMA1

FP10R06KL4BOMA1

IR (Infineon Technologies)

IGBT MODULE LOW PWR EASY2-1

0
FA300R12ME4BOSA1

FA300R12ME4BOSA1

IR (Infineon Technologies)

MODULE IGBT ECONO DUAL 3

0
IRG5U50HF12A

IRG5U50HF12A

IR (Infineon Technologies)

IGBT MOD 1200V 85A 390W POWIR 34

0
IRG5K50HF06A

IRG5K50HF06A

IR (Infineon Technologies)

IGBT MOD 600V 100A 245W POWIR 34

0
F575R06KE3B5BOSA1

F575R06KE3B5BOSA1

IR (Infineon Technologies)

IGBT MODULE 600V 75A 250W

0
FZ1200R17KF6CB2NOSA1

FZ1200R17KF6CB2NOSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 1200A

0
BSM50GD120DN2G

BSM50GD120DN2G

IR (Infineon Technologies)

IGBT MOD 1200V 78A 400W

0
IRG5U100HF12A

IRG5U100HF12A

IR (Infineon Technologies)

IGBT MOD 1200V 200A POWIR 34

0
FZ400R33KL2CB5NOSA1

FZ400R33KL2CB5NOSA1

IR (Infineon Technologies)

IGBT MOD 3300V 750A 4900W

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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