Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
BSM75GD60DLCBOSA1

BSM75GD60DLCBOSA1

IR (Infineon Technologies)

IGBT MODULE 600V 95A 330W

0

FS200T12A1T4BOSA1

FS200T12A1T4BOSA1

IR (Infineon Technologies)

MODULE IGBT HYBRID PK

0

IRG7T100HF12A

IRG7T100HF12A

IR (Infineon Technologies)

IGBT MOD 1200V 200A POWIR 34

0

BSM200GD60DLCBOSA1

BSM200GD60DLCBOSA1

IR (Infineon Technologies)

IGBT MOD 600V 226A 700W

0

IRG7T150CL12B

IRG7T150CL12B

IR (Infineon Technologies)

IGBT MOD 1200V 300A POWIR 62

0

FS30R06XL4BOMA1

FS30R06XL4BOMA1

IR (Infineon Technologies)

IGBT MODULE 600V 35A 119W

0

FF600R17KF6CB2NOSA1

FF600R17KF6CB2NOSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 600A

0

FB10R06KL4BOMA1

FB10R06KL4BOMA1

IR (Infineon Technologies)

MOD IGBT LOW PWR EASY1-1

0

IFS100V12PT4BOSA1

IFS100V12PT4BOSA1

IR (Infineon Technologies)

IGBT MODULE 1200V 100A

0

DF400R07PE4R_B6

DF400R07PE4R_B6

IR (Infineon Technologies)

IGBT MOD 650V 450A 1100W

0

IRG7U150HF12B

IRG7U150HF12B

IR (Infineon Technologies)

IGBT MOD 1200V 300A POWIR 62

0

IRG7U200HF12B

IRG7U200HF12B

IR (Infineon Technologies)

IGBT MOD 1200V 400A POWIR 62

0

FZ1200R17KE3B2NOSA1

FZ1200R17KE3B2NOSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 1200A

0

IRG7T100HF12B

IRG7T100HF12B

IR (Infineon Technologies)

IGBT MOD 1200V 200A POWIR 62

0

FS820R08A6P2LMBPSA1

FS820R08A6P2LMBPSA1

IR (Infineon Technologies)

IGBT MODULE 820A HYBRID PK DRIVE

0

FZ1000R12KF5NOSA1

FZ1000R12KF5NOSA1

IR (Infineon Technologies)

IGBT MODULE 1200V 1000A

0

FZ2400R17KF6CB2S1NOSA1

FZ2400R17KF6CB2S1NOSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 2400A

0

FZ1200R33KF2CNOSA2

FZ1200R33KF2CNOSA2

IR (Infineon Technologies)

IGBT MODULE 3300V 2000A

0

IFS150V12PT4BOSA1

IFS150V12PT4BOSA1

IR (Infineon Technologies)

IGBT MODULE 1200V 150A

0

IRG5U100HF06A

IRG5U100HF06A

IR (Infineon Technologies)

IGBT MOD 600V 130A 400W POWIR 34

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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