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Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
IRG7T200CH12B

IRG7T200CH12B

IR (Infineon Technologies)

IGBT MOD 1200V 390A POWIR 62

0
IRG7T150HF12B

IRG7T150HF12B

IR (Infineon Technologies)

IGBT MOD 1200V 300A POWIR 62

0
BSM150GD60DLC

BSM150GD60DLC

IR (Infineon Technologies)

IGBT MOD 600V 180A 570W

0
FZ1600R17KF6CB2NOSA1

FZ1600R17KF6CB2NOSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 2600A

0
IRG5U75HF06A

IRG5U75HF06A

IR (Infineon Technologies)

IGBT MOD 600V 100A 330W POWIR 34

0
FZ1000R33HE3BOSA1

FZ1000R33HE3BOSA1

IR (Infineon Technologies)

IGBT MODULE 3300V 1000A 1600W

0
BSM30GP60B2BOSA1

BSM30GP60B2BOSA1

IR (Infineon Technologies)

IGBT MODULE 600V 50A 180W

0
HIGFEB1BOSA1

HIGFEB1BOSA1

IR (Infineon Technologies)

MODULE IGBT HYBRID PK

0
DDB6U180N16RR

DDB6U180N16RR

IR (Infineon Technologies)

IGBT MOD 1200V 140A 515W

0
FZ1200R33KF2CB3S2NDSA1

FZ1200R33KF2CB3S2NDSA1

IR (Infineon Technologies)

IGBT MODULE 3300V 2000A

0
BSM100GB170DN2HOSA1

BSM100GB170DN2HOSA1

IR (Infineon Technologies)

IGBT MOD 1700V 145A 1000W

0
IFS100B12N3E4_B39

IFS100B12N3E4_B39

IR (Infineon Technologies)

IGBT MOD 1200V 100A 515W

0
BSM35GD120DN2

BSM35GD120DN2

IR (Infineon Technologies)

IGBT MOD 1200V 50A 280W

0
IRG7T50FF12E

IRG7T50FF12E

IR (Infineon Technologies)

IGBT MOD 1200V 100A POWIR ECO 2

0
FS200T12A1T4BOMA1

FS200T12A1T4BOMA1

IR (Infineon Technologies)

MODULE IGBT HYBRID PK

0
FS600R07A2E3BOSA1

FS600R07A2E3BOSA1

IR (Infineon Technologies)

MODULE IGBT 600V HYBRID PACK 2

0
FS100R12KE3_B3

FS100R12KE3_B3

IR (Infineon Technologies)

IGBT MOD 1200V 140A 480W

0
FZ900R12KF5NOSA1

FZ900R12KF5NOSA1

IR (Infineon Technologies)

IGBT MODULE 1200V AIHM130-2

0
IRG7T400SD12B

IRG7T400SD12B

IR (Infineon Technologies)

IGBT MOD 1200V 780A POWIR 62

0
IRG5K100HF12A

IRG5K100HF12A

IR (Infineon Technologies)

IGBT MOD 1200V 200A POWIR 34

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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