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Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
BSM50GX120DN2BOSA1

BSM50GX120DN2BOSA1

IR (Infineon Technologies)

LOW POWER ECONO

14
FP75R12N2T4B16BOSA1

FP75R12N2T4B16BOSA1

IR (Infineon Technologies)

IGBT MODULE

159
BSM10GP120BOSA1

BSM10GP120BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 20A 100W

0
PS3GHFANSET30603NOSA1

PS3GHFANSET30603NOSA1

IR (Infineon Technologies)

MOD IGBT STACK PSAO-1

0
BSM50GD120DN2E3226BOSA1

BSM50GD120DN2E3226BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 50A 350W

0
FF450R33T3E3B5P6BPMA1

FF450R33T3E3B5P6BPMA1

IR (Infineon Technologies)

IHV IHM T XHP 3 3-6 5K

0
BSM150GB120DN2HOSA1

BSM150GB120DN2HOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 210A 1250W

0
FF150R12KE3GB2HOSA1

FF150R12KE3GB2HOSA1

IR (Infineon Technologies)

IGBT MODULE VCES 1200V 150A

0
FS100R12KT4PB11BPSA1

FS100R12KT4PB11BPSA1

IR (Infineon Technologies)

MOD IGBT LOW PWR ECONO2-6

0
FP25R12KE3BPSA1

FP25R12KE3BPSA1

IR (Infineon Technologies)

LOW POWER ECONO

0
BSM50GB170DN2HOSA1

BSM50GB170DN2HOSA1

IR (Infineon Technologies)

BSM50GB170 - IGBT MODULE

10
FP35R12U1T4BPSA1

FP35R12U1T4BPSA1

IR (Infineon Technologies)

IGBT MOD 1200V 54A 250W

0
DDB2U50N08W1RB23BOMA2

DDB2U50N08W1RB23BOMA2

IR (Infineon Technologies)

IGBT MOD DIODE BRIDGE EASY1B-2-1

0
FP15R12W2T4BOMA1

FP15R12W2T4BOMA1

IR (Infineon Technologies)

IGBT MOD 1200V 30A 145W

0
PS3GFANSET30601NOSA1

PS3GFANSET30601NOSA1

IR (Infineon Technologies)

MOD IGBT STACK PSAO-1

0
DF400R07PE4RB6BOSA1

DF400R07PE4RB6BOSA1

IR (Infineon Technologies)

IGBT MODULE

210
FD1200R17KE3KNOSA1

FD1200R17KE3KNOSA1

IR (Infineon Technologies)

IGBT MOD 1700V 1600A 5950W

0
F4-50R07W2H3_B51

F4-50R07W2H3_B51

IR (Infineon Technologies)

IGBT MODULE VCES 650V 50A

0
FF600R12ME4EB11BPSA1

FF600R12ME4EB11BPSA1

IR (Infineon Technologies)

MEDIUM POWER ECONO

0
FD600R06ME3_B11_S2

FD600R06ME3_B11_S2

IR (Infineon Technologies)

IGBT MOD 600V 600A 2250W

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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