Transistors - IGBTs

Transistors - IGBTs - Modules

Part Number	Description / PDF	Quantity
BSM25GD120DN2BOSA1 IR (Infineon Technologies)	IGBT MOD 1200V 35A 200W	0
DDB6U25N16VRBOMA1 IR (Infineon Technologies)	IGBT MODULE	30
FZ1800R12KL4C IR (Infineon Technologies)	IGBT MODULE	63
FF300R07ME4B11BPSA1 IR (Infineon Technologies)	MEDIUM POWER ECONO	0
BSM200GA120DLCHOSA1 IR (Infineon Technologies)	IGBT MODULE	60
BSM300GA170DLS IR (Infineon Technologies)	IGBT MODULE	33
FP20R06YE3B4BOMA1 IR (Infineon Technologies)	MOD IGBT LOW PWR EASY2-1	0
FF450R33T3E3P3BPMA1 IR (Infineon Technologies)	IGBT MOD 3300V 450A AGXHP100-3	0
FP10R12YT3B4BOMA1 IR (Infineon Technologies)	MOD IGBT LOW PWR EASY2-1	0
FZ1800R12KF4S1 IR (Infineon Technologies)	IGBT MODULE	77
BSM100GB120DN2HOSA1 IR (Infineon Technologies)	IGBT MOD 1200V 150A 800W	0
FZ2400R12KE3B9NOSA1 IR (Infineon Technologies)	IGBT MODULE	15
FF600R06ME3BOSA1 IR (Infineon Technologies)	IGBT MODULE	609
FP10R12W1T4B29BOMA1 IR (Infineon Technologies)	IGBT MODULE VCES 600V 100A	0
BSM75GB120DN2_E3223C-SE IR (Infineon Technologies)	IGBT MODULE	36
DF80R12W2H3B11BOMA1 IR (Infineon Technologies)	IGBT MODULE	285
FS100R12KT4GPNPSA1 IR (Infineon Technologies)	IGBT MODULE	0
PSDC317E5630533NOSA1 IR (Infineon Technologies)	MOD IGBT STACK PSAO-1	0
IFS100B17N3E4PB11BPSA1 IR (Infineon Technologies)	MIPAQ INTELLIGENT POWER MODULE (	401
FP15R06YE3B4BOMA1 IR (Infineon Technologies)	MOD IGBT LOW PWR EASY2-1	0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Standard IGBT Modules	General-purpose, balanced conduction/switching losses	Industrial motor drives, HVAC systems
High-Speed IGBTs	Optimized for switching frequencies >20kHz	Welding inverters, induction heating
Enhanced Dynamic IGBTs	Reduced tail current for lower switching losses	Electric vehicle (EV) on-board chargers
Trench IGBTs	Vertical trench gate structure for improved efficiency	Solar inverters, energy storage systems
Double-Sided Cooling Modules	Thermal management with cooling on both sides	High-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al₂O₃ or Si₃N₄). Key structural elements include:

Chip-level integration of IGBT and diode cells
DBC (Direct Bonded Copper) substrate for thermal conductivity
Thermoplastic/epoxy encapsulation for insulation
Aluminum wire bonds for die interconnection
Integrated temperature sensors in advanced modules

4. Key Technical Specifications

Parameter	Description	Importance
Rated Collector Current (I_C)	Maximum continuous operating current	Determines power handling capability
Breakdown Voltage (V_CE)	Max voltage before conduction	System voltage rating compatibility
Conduction Voltage Drop	Voltage loss during on-state	Impacts efficiency and thermal design
Switching Losses (E_on/E_off)	Energy loss during state transitions	Dictates maximum switching frequency
Operating Temperature Range	Valid junction temperature range	Reliability and lifespan factor
Isolation Voltage	Dielectric strength between layers	Safety compliance for high-voltage systems

5. Application Areas

Industrial: Motor drives, CNC machines, welding equipment
Automotive: EV traction inverters, PHEV battery management
Energy: Solar PV inverters, wind turbine converters
Consumer: High-end home appliances with variable speed drives
Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
Infineon	FF600R12KE4	600A/1200V, 3-level topology, 175 C rating
ON Semiconductor	NVHL015AN	150A/1200V, automotive qualified
Mitsubishi Electric	CM400DY-34A	400A/1700V, double-sided cooling
Fuji Electric	2MBI150XAA120-50	150A/1200V, intelligent power module
STMicroelectronics	STGF8NC60KD	8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

Matching voltage/current ratings with system requirements
Switching frequency vs. conduction loss trade-off
Thermal management capabilities (R_th values)
Short-circuit withstand capability
Package dimensions and cooling interface compatibility
Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

Transition to SiC/GaN hybrid modules for higher efficiency
Development of 3D packaging for reduced parasitic inductance
Integration of gate drivers and sensors in smart modules
Growing adoption in EV charging infrastructure (800V+ systems)
Advancements in sintering technology for die attach reliability