Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
BSM50GB120DLCHOSA1

BSM50GB120DLCHOSA1

IR (Infineon Technologies)

IGBT MODULE

1170

FS800R07A2E3B32BOSA1

FS800R07A2E3B32BOSA1

IR (Infineon Technologies)

IGBT MODULES

0

BSM300GA120DLCHOSA1

BSM300GA120DLCHOSA1

IR (Infineon Technologies)

INSULATED GATE BIPOLAR TRANSISTO

83

BSM15GD120DLCE3224BOSA1

BSM15GD120DLCE3224BOSA1

IR (Infineon Technologies)

IGBT MODULE

101

FS10R12YE3BOMA1

FS10R12YE3BOMA1

IR (Infineon Technologies)

MOD IGBT LOW PWR EASY2-1

0

DF100R07W1H5FPB53BPSA1

DF100R07W1H5FPB53BPSA1

IR (Infineon Technologies)

IGBT MODULE

253

BSM300GA120DN2HOSA1

BSM300GA120DN2HOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 430A 2500W

0

FP75R17N3E4BPSA1

FP75R17N3E4BPSA1

IR (Infineon Technologies)

FP75R17 - IGBT MODULE

251

FS600R07A2E3B32BOSA1

FS600R07A2E3B32BOSA1

IR (Infineon Technologies)

FS600R07 - IGBT MODULE

294

FP35R12W2T4BOMA1

FP35R12W2T4BOMA1

IR (Infineon Technologies)

IGBT MOD 1200V 54A 215W

5

BSM100GB120DLCKHOSA1

BSM100GB120DLCKHOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 100A 830W

0

PSDC312E8427618NOSA1

PSDC312E8427618NOSA1

IR (Infineon Technologies)

MOD IGBT STACK PSAO-1

0

BSM15GD120DN2E3224BOSA1

BSM15GD120DN2E3224BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 25A 145W

0

FP75R07N2E4B11BOSA1

FP75R07N2E4B11BOSA1

IR (Infineon Technologies)

IGBT, 650V, N-CHANNEL

20

DF450R12N2E4PB11BPSA1

DF450R12N2E4PB11BPSA1

IR (Infineon Technologies)

IGBT MODULE LOW POWER ECONO

0

FF150R12YT3BOMA1

FF150R12YT3BOMA1

IR (Infineon Technologies)

IGBT MOD 1200V 200A 625W

0

FD400R16KF4

FD400R16KF4

IR (Infineon Technologies)

IGBT MODULE

26

FF300R06KE3_B2

FF300R06KE3_B2

IR (Infineon Technologies)

IGBT MODULE

0

IFS150B12N3E4PB11BPSA1

IFS150B12N3E4PB11BPSA1

IR (Infineon Technologies)

IGBT MOD 1200V 300A 750W

0

PSDC412E11228049NOSA1

PSDC412E11228049NOSA1

IR (Infineon Technologies)

MOD IGBT STACK PSAO-1

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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