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Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
FF600R12IE4PNOSA1

FF600R12IE4PNOSA1

IR (Infineon Technologies)

FF600R12 - INSULATED GATE BIPOLA

31
BSM50GAL120DN2HOSA1

BSM50GAL120DN2HOSA1

IR (Infineon Technologies)

INSULATED GATE BIPOLAR TRANSISTO

122
BSM200GB120DLCHOSA1

BSM200GB120DLCHOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 420A 1550W

0
FZ400R12KE3B1HOSA1

FZ400R12KE3B1HOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 650A 2250W

0
IFS200B12N3E4B31BPSA1

IFS200B12N3E4B31BPSA1

IR (Infineon Technologies)

IGBT MOD 1200V 400A 940W

0
FF800R17KE3NOSA1

FF800R17KE3NOSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 4450W

0
FZ1000R33HE3C1NOSA1

FZ1000R33HE3C1NOSA1

IR (Infineon Technologies)

IHV IHM T XHP 3 3-6 5K

0
BSM75GAL120DN2HOSA1

BSM75GAL120DN2HOSA1

IR (Infineon Technologies)

IGBT MODULE

0
FF450R33T3E3P4BPMA1

FF450R33T3E3P4BPMA1

IR (Infineon Technologies)

IGBT MOD 3300V 450A AGXHP100-3

0
FF300R12KE3B2HOSA1

FF300R12KE3B2HOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 440A 1450W

0
FF600R12ME4CPB11BPSA1

FF600R12ME4CPB11BPSA1

IR (Infineon Technologies)

INSULATED GATE BIPOLAR TRANSISTO

47
BSM400GA120DN2HOSA1

BSM400GA120DN2HOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 550A 2700W

0
FS20R06XE3BOMA1

FS20R06XE3BOMA1

IR (Infineon Technologies)

IGBT MODULE LOW PWR EASY1-1

0
BSM200GA120DLCSHOSA1

BSM200GA120DLCSHOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 370A 1450W

0
FS25R12YT3BOMA1

FS25R12YT3BOMA1

IR (Infineon Technologies)

IGBT MOD 1200V 40A 165W

0
FS600R07A2E3B31BOSA1

FS600R07A2E3B31BOSA1

IR (Infineon Technologies)

IGBT MODULES

0
BSM400GA120DLCHOSA1

BSM400GA120DLCHOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 625A 2500W

0
FS215R04A1E3DBOMA1

FS215R04A1E3DBOMA1

IR (Infineon Technologies)

FS215R04 - IGBT MODULE

16
FZ2000R33HE4BOSA1

FZ2000R33HE4BOSA1

IR (Infineon Technologies)

IGBT MOD IHV IHM T XHP 3 3-6 5K

5
FP15R12YT3BOMA1

FP15R12YT3BOMA1

IR (Infineon Technologies)

IGBT MOD 1200V 25A 110W

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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