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Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
FT150R12KE3GB4BDLA1

FT150R12KE3GB4BDLA1

IR (Infineon Technologies)

IGBT MOD 1200V 200A 700W

0
FS35R12KE3GBOSA1

FS35R12KE3GBOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 55A 200W

0
900545HOSA1

900545HOSA1

IR (Infineon Technologies)

IGBT MODULE

0
FF401R17KF6C_B2

FF401R17KF6C_B2

IR (Infineon Technologies)

IGBT MOD 1700V 650A 3150W

0
IFS100B12N3E4PB11BPSA1

IFS100B12N3E4PB11BPSA1

IR (Infineon Technologies)

IGBT MOD 1200V 150A 515W

0
BSM35GP120GBOSA1

BSM35GP120GBOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 45A 230W

0
FS30R06XE3BOMA1

FS30R06XE3BOMA1

IR (Infineon Technologies)

IGBT MODULE 600V 37A 100W

0
FF600R17KE3NOSA1

FF600R17KE3NOSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 600A

0
FP10R12YT3BOMA1

FP10R12YT3BOMA1

IR (Infineon Technologies)

MOD IGBT LOW PWR EASY2-1

0
DF160R12W2H3_B11

DF160R12W2H3_B11

IR (Infineon Technologies)

IGBT MODULE VCES 1200V 150A

0
FP75R12N2T4PBPSA1

FP75R12N2T4PBPSA1

IR (Infineon Technologies)

IGBT MODULE LOW POWER ECONO

0
IFS150B12N3E4B31BOSA1

IFS150B12N3E4B31BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 300A 750W

0
FP25R12KT4B16BOSA1

FP25R12KT4B16BOSA1

IR (Infineon Technologies)

IGBT 1200V, N CHANNEL

17
IFS75B12N3E4B31BOSA1

IFS75B12N3E4B31BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 150A 385W

0
FF1000R17IE4S4BOSA2

FF1000R17IE4S4BOSA2

IR (Infineon Technologies)

FF1000R17 - IGBT MODULE

172
FF600R12IS4F

FF600R12IS4F

IR (Infineon Technologies)

IGBT MOD 1200V 600A 3700W

0
FS150R17KE3G

FS150R17KE3G

IR (Infineon Technologies)

IGBT MODULE

54
FS75R12KT4PB11BPSA1

FS75R12KT4PB11BPSA1

IR (Infineon Technologies)

IGBT MODULE LOW PWR ECONO2-6

0
FDDF80R12W1H3B52BOMA1

FDDF80R12W1H3B52BOMA1

IR (Infineon Technologies)

IGBT MODULE

672
FS100R12KT4PBPSA1

FS100R12KT4PBPSA1

IR (Infineon Technologies)

INSULATED GATE BIPOLAR TRANSISTO

250

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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