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Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
FS800R07A2E3IB31BPSA1

FS800R07A2E3IB31BPSA1

IR (Infineon Technologies)

IGBT MODULE MED PWR ECOHY2-1

0
BSM15GP120BOSA1

BSM15GP120BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 35A 180W

0
FZ2400R12HP4PHPSA1

FZ2400R12HP4PHPSA1

IR (Infineon Technologies)

IGBT MOD 1200V 3460A AGIHMB130-2

0
IFF600B12ME4S8PB11BOSA1

IFF600B12ME4S8PB11BOSA1

IR (Infineon Technologies)

IFF600B12 - IGBT MODULE

8
PS3GFANSET30600NOSA1

PS3GFANSET30600NOSA1

IR (Infineon Technologies)

MOD IGBT STACK PSAO-1

0
FP15R12KE3BOMA1

FP15R12KE3BOMA1

IR (Infineon Technologies)

MOD IGBT LOW PWR EASY2-1

0
PSDC217E3730833NOSA1

PSDC217E3730833NOSA1

IR (Infineon Technologies)

MOD IGBT STACK PSAO-1

0
BSM25GP120BOSA1

BSM25GP120BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 45A 230W

0
BSM300GB120DLCHOSA1

BSM300GB120DLCHOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 625A 2500W

0
BSM20GD60DLCE3224

BSM20GD60DLCE3224

IR (Infineon Technologies)

IGBT MODULE

15
BSM35GD120DN2E3224BOSA1

BSM35GD120DN2E3224BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 50A 280W

0
FS25R12W1T4PBPSA1

FS25R12W1T4PBPSA1

IR (Infineon Technologies)

IGBT MODULE 1200V 45A 205W EASY

0
FF1000R17IE4DB2S4BOSA2

FF1000R17IE4DB2S4BOSA2

IR (Infineon Technologies)

FF1000R17 - IGBT MODULE

186
F4100R17ME4B11BPSA1

F4100R17ME4B11BPSA1

IR (Infineon Technologies)

F4100R17 - IGBT MODULE

56
1MS08017E32W31490NOSA1

1MS08017E32W31490NOSA1

IR (Infineon Technologies)

MODULE IGBT STACK A-MS2-1

0
FS300R17OE4PBOSA1

FS300R17OE4PBOSA1

IR (Infineon Technologies)

IGBT MODULE

38
FF150R12KE3B8BOSA1

FF150R12KE3B8BOSA1

IR (Infineon Technologies)

MOD IGBT LOW PWR ECONO2-6

0
BSM75GB120DN2HOSA1

BSM75GB120DN2HOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 105A 625W

0
FZ1500R33HE3C1NPSA1

FZ1500R33HE3C1NPSA1

IR (Infineon Technologies)

IHV IHM T XHP 3 3-6 5K

0
FD400R07PE4RB6BOSA1

FD400R07PE4RB6BOSA1

IR (Infineon Technologies)

FD400R07 - IGBT MODULE

267

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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