Transistors - IGBTs

Transistors - IGBTs - Modules

Part Number	Description / PDF	Quantity
FF600R12KF4NOSA1 IR (Infineon Technologies)	IGBT MODULE	28
FP10R12KE3BOMA1 IR (Infineon Technologies)	MOD IGBT LOW PWR EASY2-1	0
BSM200GA120DN2HOSA1 IR (Infineon Technologies)	IGBT MOD 1200V 300A 1550W	0
FZ500R65KE3C1NPSA1 IR (Infineon Technologies)	IHV IHM T XHP 3 3-6 5K	0
FZ2400R12KE3NOSA1 IR (Infineon Technologies)	IGBT MODULE	68
BSM100GB120DN2B2HOSA1 IR (Infineon Technologies)	IGBT MODULE	17
BSM75GAR120DN2HOSA1 IR (Infineon Technologies)	IGBT MODULE	5
DF75R12W1H4FB11BOMA2 IR (Infineon Technologies)	IGBT MOD 1200V 25A 20MW	0
FF450R33T3E3B5P2BPSA1 IR (Infineon Technologies)	IHV IHM T XHP 3 3-6 5K	0
FP35R12KT4B16BOSA1 IR (Infineon Technologies)	IGBT MOD 1200V 70A 210W	0
FF800R12KL4CNOSA1 IR (Infineon Technologies)	FF800R12 - INSULATED GATE BIPOLA	1
FP100R12KT4B11BOSA1 IR (Infineon Technologies)	FP100R12 - IGBT MODULE	18
FZ3600R12KE3NOSA1 IR (Infineon Technologies)	IGBT MODULE	8
BSM35GD120DLCE3224BOSA1 IR (Infineon Technologies)	LOW POWER ECONO	4
PS2GFANSET30599NOSA1 IR (Infineon Technologies)	MOD IGBT STACK PSAO-1	0
BSM50GD120DN2BOSA1 IR (Infineon Technologies)	IGBT MOD 1200V 72A 350W	0
FD-DF80R12W1H3_B52 IR (Infineon Technologies)	IGBT MOD 1200V 40A 215W	0
FZ400R17KE3S4HOSA1 IR (Infineon Technologies)	IGBT MODULE	40
900546CHOSA1 IR (Infineon Technologies)	IGBT MODULE	0
FD600R17KE3KB5NOSA1 IR (Infineon Technologies)	IGBT MODULE 1700V 4300W	0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Standard IGBT Modules	General-purpose, balanced conduction/switching losses	Industrial motor drives, HVAC systems
High-Speed IGBTs	Optimized for switching frequencies >20kHz	Welding inverters, induction heating
Enhanced Dynamic IGBTs	Reduced tail current for lower switching losses	Electric vehicle (EV) on-board chargers
Trench IGBTs	Vertical trench gate structure for improved efficiency	Solar inverters, energy storage systems
Double-Sided Cooling Modules	Thermal management with cooling on both sides	High-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al₂O₃ or Si₃N₄). Key structural elements include:

Chip-level integration of IGBT and diode cells
DBC (Direct Bonded Copper) substrate for thermal conductivity
Thermoplastic/epoxy encapsulation for insulation
Aluminum wire bonds for die interconnection
Integrated temperature sensors in advanced modules

4. Key Technical Specifications

Parameter	Description	Importance
Rated Collector Current (I_C)	Maximum continuous operating current	Determines power handling capability
Breakdown Voltage (V_CE)	Max voltage before conduction	System voltage rating compatibility
Conduction Voltage Drop	Voltage loss during on-state	Impacts efficiency and thermal design
Switching Losses (E_on/E_off)	Energy loss during state transitions	Dictates maximum switching frequency
Operating Temperature Range	Valid junction temperature range	Reliability and lifespan factor
Isolation Voltage	Dielectric strength between layers	Safety compliance for high-voltage systems

5. Application Areas

Industrial: Motor drives, CNC machines, welding equipment
Automotive: EV traction inverters, PHEV battery management
Energy: Solar PV inverters, wind turbine converters
Consumer: High-end home appliances with variable speed drives
Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
Infineon	FF600R12KE4	600A/1200V, 3-level topology, 175 C rating
ON Semiconductor	NVHL015AN	150A/1200V, automotive qualified
Mitsubishi Electric	CM400DY-34A	400A/1700V, double-sided cooling
Fuji Electric	2MBI150XAA120-50	150A/1200V, intelligent power module
STMicroelectronics	STGF8NC60KD	8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

Matching voltage/current ratings with system requirements
Switching frequency vs. conduction loss trade-off
Thermal management capabilities (R_th values)
Short-circuit withstand capability
Package dimensions and cooling interface compatibility
Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

Transition to SiC/GaN hybrid modules for higher efficiency
Development of 3D packaging for reduced parasitic inductance
Integration of gate drivers and sensors in smart modules
Growing adoption in EV charging infrastructure (800V+ systems)
Advancements in sintering technology for die attach reliability