Transistors - IGBTs

Transistors - IGBTs - Modules

Part Number	Description / PDF	Quantity
BSM200GA120DN2FS IR (Infineon Technologies)	IGBT MODULE	6
DDB6U180N16RRBPSA1 IR (Infineon Technologies)	IGBT MODULE	0
FS100R12KT4GPB11BPSA1 IR (Infineon Technologies)	IGBT MODULE	42
FB20R06YE3B1BOMA1 IR (Infineon Technologies)	IGBT MODULE	20
FZ1200R12KE3NOSA1 IR (Infineon Technologies)	IGBT MODULE	58
BSM35GD120DN2BOSA1 IR (Infineon Technologies)	IGBT MODULE	90
FD401R17KF6C_B2 IR (Infineon Technologies)	IGBT MOD 1700V 650A 3150W	0
FP40R12KT3BPSA1 IR (Infineon Technologies)	LOW POWER ECONO	0
FS35R12YT3BOMA1 IR (Infineon Technologies)	IGBT MODULE	240
2LS20017E42W34854NOSA1 IR (Infineon Technologies)	IGBT MODULE 1700V 20A	0
IFS150B12N3E4PB50BPSA1 IR (Infineon Technologies)	IGBT MODULE LOW PWR ECONO	0
FS100R07N3E4B11BOSA1 IR (Infineon Technologies)	FS100R07N3E4B_11 - IGBT MODULE	4
FS100R07N3E4BOSA1 IR (Infineon Technologies)	IGBT, 650V, N-CHANNEL	376
FD1200R17KE3KB2NOSA1 IR (Infineon Technologies)	FD1200R17 - INSULATED GATE BIPOL	30
BSM150GB170DLCE3256HDLA1 IR (Infineon Technologies)	BSM150GB170 - INSULATED GATE BIP	47
F475R07W2H3B51BOMA1 IR (Infineon Technologies)	IGBT, 75A, 650V, N-CHANNEL	180
FS100R07N3E4_B11 IR (Infineon Technologies)	IGBT, 100A, 650V, N-CHANNEL	140
FZ3600R17KE3 IR (Infineon Technologies)	IGBT MODULE	14
FF300R12ME4PBOSA1 IR (Infineon Technologies)	IGBT MODULE	2
BSM100GD120DN2BOSA1 IR (Infineon Technologies)	IGBT MOD 1200V 150A 680W	0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Standard IGBT Modules	General-purpose, balanced conduction/switching losses	Industrial motor drives, HVAC systems
High-Speed IGBTs	Optimized for switching frequencies >20kHz	Welding inverters, induction heating
Enhanced Dynamic IGBTs	Reduced tail current for lower switching losses	Electric vehicle (EV) on-board chargers
Trench IGBTs	Vertical trench gate structure for improved efficiency	Solar inverters, energy storage systems
Double-Sided Cooling Modules	Thermal management with cooling on both sides	High-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al₂O₃ or Si₃N₄). Key structural elements include:

Chip-level integration of IGBT and diode cells
DBC (Direct Bonded Copper) substrate for thermal conductivity
Thermoplastic/epoxy encapsulation for insulation
Aluminum wire bonds for die interconnection
Integrated temperature sensors in advanced modules

4. Key Technical Specifications

Parameter	Description	Importance
Rated Collector Current (I_C)	Maximum continuous operating current	Determines power handling capability
Breakdown Voltage (V_CE)	Max voltage before conduction	System voltage rating compatibility
Conduction Voltage Drop	Voltage loss during on-state	Impacts efficiency and thermal design
Switching Losses (E_on/E_off)	Energy loss during state transitions	Dictates maximum switching frequency
Operating Temperature Range	Valid junction temperature range	Reliability and lifespan factor
Isolation Voltage	Dielectric strength between layers	Safety compliance for high-voltage systems

5. Application Areas

Industrial: Motor drives, CNC machines, welding equipment
Automotive: EV traction inverters, PHEV battery management
Energy: Solar PV inverters, wind turbine converters
Consumer: High-end home appliances with variable speed drives
Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
Infineon	FF600R12KE4	600A/1200V, 3-level topology, 175 C rating
ON Semiconductor	NVHL015AN	150A/1200V, automotive qualified
Mitsubishi Electric	CM400DY-34A	400A/1700V, double-sided cooling
Fuji Electric	2MBI150XAA120-50	150A/1200V, intelligent power module
STMicroelectronics	STGF8NC60KD	8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

Matching voltage/current ratings with system requirements
Switching frequency vs. conduction loss trade-off
Thermal management capabilities (R_th values)
Short-circuit withstand capability
Package dimensions and cooling interface compatibility
Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

Transition to SiC/GaN hybrid modules for higher efficiency
Development of 3D packaging for reduced parasitic inductance
Integration of gate drivers and sensors in smart modules
Growing adoption in EV charging infrastructure (800V+ systems)
Advancements in sintering technology for die attach reliability