F475R07W2H3B51BOMA1

Manufacturer Part F475R07W2H3B51BOMA1
Manufacturer IR (Infineon Technologies)
Description IGBT, 75A, 650V, N-CHANNEL
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet F475R07W2H3B51BOMA1 PDF
Availability 180 pieces
Shipped from HK warehouse
Expected Shipping Dec 09 - Dec 13 2025
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:-
Package:Tray
Part Status:Obsolete
IGBT Type:-
Configuration:Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):75 A
Power - Max:520 W
Vce(on) (Max) @ Vge, Ic:1.55V @ 15V, 37.5A
Current - Collector Cutoff (Max):1 mA
Input Capacitance (Cies) @ Vce:4.7 nF @ 25 V
Input:Standard
NTC Thermistor:Yes
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
More Information
F475R07W2H3B51BOMA1
F475R07W2H3B51BOMA1
IR (Infineon Technologies) F475R07W2H3B51BOMA1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
F475R07W2H3B51BOMA1 PDF
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