Transistors - IGBTs

Transistors - IGBTs - Modules

Part Number	Description / PDF	Quantity
BSM50GP60B2BOSA1 IR (Infineon Technologies)	IGBT MODULE	0
FS3L50R07W2H3B11BPSA1 IR (Infineon Technologies)	IGBT MODULE 650V 75A 215W	0
DF450R17N2E4PB11BPSA1 IR (Infineon Technologies)	IGBT MODULE LOW POWER ECONO	0
FF225R12ME3BOSA1 IR (Infineon Technologies)	IGBT MODULE	183
FS100R12KT4BOSA1 IR (Infineon Technologies)	IGBT MOD 1200V 100A 515W	0
IFS150B17N3E4PB11BPSA1 IR (Infineon Technologies)	IGBT MOD 1700V 300A 20MW	0
DF200R12W1H3FB11BOMA1 IR (Infineon Technologies)	IGBT MOD 1200V 30A 20MW	0
FF800R12KF4 IR (Infineon Technologies)	IGBT MOD 1200V 800A 5000W	0
BSM25GD120DN2E3224BOSA1 IR (Infineon Technologies)	IGBT MOD 1200V 35A 200W	0
FZ250R65KE3NPSA1 IR (Infineon Technologies)	IGBT MOD 6500V 500A 4800W	4
BSM300GA120DLCSHOSA1 IR (Infineon Technologies)	IGBT MOD 1200V 570A 2250W	0
FF400R12KT3EHOSA1 IR (Infineon Technologies)	FF400R12 - IGBT MODULE	398
FD1600/1200R17KF6C_B2 IR (Infineon Technologies)	IGBT MODULE VCES 1700V 1600A	0
FZ1600R17KF6CB2S2NOSA1 IR (Infineon Technologies)	FZ1600R17 - INSULATED GATE BIPOL	14
FP50R12N2T4B16BOSA1 IR (Infineon Technologies)	IGBT MODULE	106
FF450R33T3E3B5P3BPSA1 IR (Infineon Technologies)	IHV IHM T XHP 3 3-6 5K	0
FS10R06VL4_B2 IR (Infineon Technologies)	IGBT MODULE	24
FP10R12W1T7PB3BPSA1 IR (Infineon Technologies)	LOW POWER EASY	0
FS300R120E4B0SA1 IR (Infineon Technologies)	IGBT MODULE	1
BSM150GB170DN2HOSA1 IR (Infineon Technologies)	IGBT MODULE	30

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Standard IGBT Modules	General-purpose, balanced conduction/switching losses	Industrial motor drives, HVAC systems
High-Speed IGBTs	Optimized for switching frequencies >20kHz	Welding inverters, induction heating
Enhanced Dynamic IGBTs	Reduced tail current for lower switching losses	Electric vehicle (EV) on-board chargers
Trench IGBTs	Vertical trench gate structure for improved efficiency	Solar inverters, energy storage systems
Double-Sided Cooling Modules	Thermal management with cooling on both sides	High-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al₂O₃ or Si₃N₄). Key structural elements include:

Chip-level integration of IGBT and diode cells
DBC (Direct Bonded Copper) substrate for thermal conductivity
Thermoplastic/epoxy encapsulation for insulation
Aluminum wire bonds for die interconnection
Integrated temperature sensors in advanced modules

4. Key Technical Specifications

Parameter	Description	Importance
Rated Collector Current (I_C)	Maximum continuous operating current	Determines power handling capability
Breakdown Voltage (V_CE)	Max voltage before conduction	System voltage rating compatibility
Conduction Voltage Drop	Voltage loss during on-state	Impacts efficiency and thermal design
Switching Losses (E_on/E_off)	Energy loss during state transitions	Dictates maximum switching frequency
Operating Temperature Range	Valid junction temperature range	Reliability and lifespan factor
Isolation Voltage	Dielectric strength between layers	Safety compliance for high-voltage systems

5. Application Areas

Industrial: Motor drives, CNC machines, welding equipment
Automotive: EV traction inverters, PHEV battery management
Energy: Solar PV inverters, wind turbine converters
Consumer: High-end home appliances with variable speed drives
Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
Infineon	FF600R12KE4	600A/1200V, 3-level topology, 175 C rating
ON Semiconductor	NVHL015AN	150A/1200V, automotive qualified
Mitsubishi Electric	CM400DY-34A	400A/1700V, double-sided cooling
Fuji Electric	2MBI150XAA120-50	150A/1200V, intelligent power module
STMicroelectronics	STGF8NC60KD	8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

Matching voltage/current ratings with system requirements
Switching frequency vs. conduction loss trade-off
Thermal management capabilities (R_th values)
Short-circuit withstand capability
Package dimensions and cooling interface compatibility
Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

Transition to SiC/GaN hybrid modules for higher efficiency
Development of 3D packaging for reduced parasitic inductance
Integration of gate drivers and sensors in smart modules
Growing adoption in EV charging infrastructure (800V+ systems)
Advancements in sintering technology for die attach reliability