Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
FP15R12W1T4PB11BPSA1

FP15R12W1T4PB11BPSA1

IR (Infineon Technologies)

IGBT MOD 1200V 30A 20MW

0

FF400R06KE3HOSA1

FF400R06KE3HOSA1

IR (Infineon Technologies)

IGBT MOD 600V 500A 1250W

0

FS225R17KE3BOSA1

FS225R17KE3BOSA1

IR (Infineon Technologies)

IGBT MODULE

341

FF200R12KE4PHOSA1

FF200R12KE4PHOSA1

IR (Infineon Technologies)

IGBT MODULE 1200V 200A

0

FD1000R33HL3KBPSA1

FD1000R33HL3KBPSA1

IR (Infineon Technologies)

FD1000R33 - IGBT MODULE

42

FP15R06W1E3B11BOMA1

FP15R06W1E3B11BOMA1

IR (Infineon Technologies)

FP15R06 - IGBT MODULE

24

FF400R33KF2CNOSA1

FF400R33KF2CNOSA1

IR (Infineon Technologies)

IGBT MOD 3300V 660A 4800W

0

FF225R12ME4PB11BPSA1

FF225R12ME4PB11BPSA1

IR (Infineon Technologies)

FFXR12M4P - IGBT MODULE

135

F3L300R12MT4PB22BPSA1

F3L300R12MT4PB22BPSA1

IR (Infineon Technologies)

F3L300R12 - IGBT MODULE

9

2PS12017E34W32132NOSA1

2PS12017E34W32132NOSA1

IR (Infineon Technologies)

MODULE IGBT STACK A-PS4-1

0

DF1000R17IE4BOSA1

DF1000R17IE4BOSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 6250W

0

F3L150R12W2H3B11BPSA1

F3L150R12W2H3B11BPSA1

IR (Infineon Technologies)

IGBT MOD 1200V 75A 500W

15

FZ2400R17HP4B2BOSA2

FZ2400R17HP4B2BOSA2

IR (Infineon Technologies)

IGBT MODULE 1700V 4800A

0

FS100R12KS4BOSA1

FS100R12KS4BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 130A 660W

0

FS150R06KE3BOSA1

FS150R06KE3BOSA1

IR (Infineon Technologies)

IGBT MOD 600V 150A 430W

26

FZ750R65KE3NOSA1

FZ750R65KE3NOSA1

IR (Infineon Technologies)

IGBT MOD 6500V 750A A-IHV190-6

2

FZ800R16KF4NOSA1

FZ800R16KF4NOSA1

IR (Infineon Technologies)

IGBT MODULE

20

FP25R12U1T4BPSA1

FP25R12U1T4BPSA1

IR (Infineon Technologies)

IGBT MOD 1200V 39A 190W

0

F3L400R07ME4B22BOSA1

F3L400R07ME4B22BOSA1

IR (Infineon Technologies)

F3L400R07 - IGBT MODULE

20

BSM75GD120DN2BOSA1

BSM75GD120DN2BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 103A 520W

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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