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Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
FF900R12IP4PBOSA1

FF900R12IP4PBOSA1

IR (Infineon Technologies)

FF900R12 - IGBT MODULE

120
IFF600B12ME4PB11BPSA1

IFF600B12ME4PB11BPSA1

IR (Infineon Technologies)

IGBT MOD 1200V 600A 40W

6
FR900R12IP4DBPSA1

FR900R12IP4DBPSA1

IR (Infineon Technologies)

IGBT MODULE PP IHM I XHP 1 7KV

2
FD800R45KL3KB5NPSA1

FD800R45KL3KB5NPSA1

IR (Infineon Technologies)

IGBT MOD 4500V 800A 9000W

0
FS75R07U1E4BPSA1

FS75R07U1E4BPSA1

IR (Infineon Technologies)

IGBT MOD 650V 100A 275W

0
FF225R12ME4B11BPSA1

FF225R12ME4B11BPSA1

IR (Infineon Technologies)

FF225R12 - IGBT MODULE

177
FF225R12MS4BOSA1

FF225R12MS4BOSA1

IR (Infineon Technologies)

FF225R12 - IGBT MODULE

98
F3L300R12MT4B22BOSA1

F3L300R12MT4B22BOSA1

IR (Infineon Technologies)

F3L300R12 - IGBT MODULE

9
FF200R12KE4HOSA1

FF200R12KE4HOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 240A 1100W

2
FS50R12W2T7B11BOMA1

FS50R12W2T7B11BOMA1

IR (Infineon Technologies)

IGBT MOD 1200V 50A

11
FZ3600R12HP4PHPSA1

FZ3600R12HP4PHPSA1

IR (Infineon Technologies)

IGBT MOD 1200V 4930A AGIHMB190-2

0
FS500R17OE4DPBOSA1

FS500R17OE4DPBOSA1

IR (Infineon Technologies)

IGBT MOD 1700V 1000A 20MW

0
FS3L25R12W2H3B11BPSA1

FS3L25R12W2H3B11BPSA1

IR (Infineon Technologies)

IGBT MOD 1200V 40A 175W

15
FS100R12KE3BOSA1

FS100R12KE3BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 140A 480W

34
IFF2400P17LE4BPSA1

IFF2400P17LE4BPSA1

IR (Infineon Technologies)

IFF2400P17 - AC/DC POWER MODULES

3
FP150R12KT4PBPSA1

FP150R12KT4PBPSA1

IR (Infineon Technologies)

IGBT MODULE 1200V 150A

6
F3L400R12PT4PB26BOSA1

F3L400R12PT4PB26BOSA1

IR (Infineon Technologies)

F3L400R12 - IGBT MODULE

4
FF150R12KT3GHOSA1

FF150R12KT3GHOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 225A 780W

9
F475R06W1E3BOMA1

F475R06W1E3BOMA1

IR (Infineon Technologies)

IGBT MOD 600V 100A 275W

24
FD200R12PT4B6BOSA1

FD200R12PT4B6BOSA1

IR (Infineon Technologies)

FD200R12 - IGBT MODULE

86

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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