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Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
FS20R06VE3BOMA1

FS20R06VE3BOMA1

IR (Infineon Technologies)

IGBT MOD 600V 25A 71.5W

0
FZ1800R12HP4B9HOSA2

FZ1800R12HP4B9HOSA2

IR (Infineon Technologies)

FZ1800R12 - IGBT MODULE

376
FS75R12KT4BPSA1

FS75R12KT4BPSA1

IR (Infineon Technologies)

GBT MODULE 1200V 75A

0
FS75R12W2T4B11BOMA1

FS75R12W2T4B11BOMA1

IR (Infineon Technologies)

IGBT MOD 1200V 107A 375W

14
FS660R08A6P2FBBPSA1

FS660R08A6P2FBBPSA1

IR (Infineon Technologies)

HYBRID PACK DRIVE

0
F3L200R12N2H3B47BPSA1

F3L200R12N2H3B47BPSA1

IR (Infineon Technologies)

IGBT MOD 1200V 200A 20MW ECONO

0
FF200R12KT3EHOSA1

FF200R12KT3EHOSA1

IR (Infineon Technologies)

FF200R12 - IGBT MODULE

4
DD1200S12H4HOSA1

DD1200S12H4HOSA1

IR (Infineon Technologies)

IGBT MODULE 1200V 1200A

0
FP150R12KT4B11BPSA1

FP150R12KT4B11BPSA1

IR (Infineon Technologies)

FP150R12 - IGBT MODULE

5
FS450R17KE4BOSA1

FS450R17KE4BOSA1

IR (Infineon Technologies)

IGBT MOD 1700V 600A 2500W

0
F450R12KS4BOSA1

F450R12KS4BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 70A 355W

10
FZ600R17KE4HOSA1

FZ600R17KE4HOSA1

IR (Infineon Technologies)

IGBT MOD 1700V 1200A 3350W

34
FF1800R12IE5PBPSA1

FF1800R12IE5PBPSA1

IR (Infineon Technologies)

IGBT MOD 1200V 1800A 20MW

3
2LS20017E42W36702NOSA1

2LS20017E42W36702NOSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 20A

0
FS150R12KT4B11BOSA1

FS150R12KT4B11BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 150A 750W

0
FF600R12IE4BOSA1

FF600R12IE4BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 600A 3350W

21
FF600R12ME4CBOSA1

FF600R12ME4CBOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 1060A 4050W

20
FZ1000R33HL3BPSA1

FZ1000R33HL3BPSA1

IR (Infineon Technologies)

FZ1000R33 - IGBT MODULE

2
FF6MR12W2M1PB11BPSA1

FF6MR12W2M1PB11BPSA1

IR (Infineon Technologies)

IGBT MODULE LOW POWER EASY

22
FD150R12RT4HOSA1

FD150R12RT4HOSA1

IR (Infineon Technologies)

FD150R12 - IGBT MODULE

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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