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Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
FP100R12KT4PBPSA1

FP100R12KT4PBPSA1

IR (Infineon Technologies)

INSULATED GATE BIPOLAR TRANSISTO

138
FP25R12KT4B15BOSA1

FP25R12KT4B15BOSA1

IR (Infineon Technologies)

FP25R12 - IGBT MODULE

122
FF600R12ME4CB11BOSA1

FF600R12ME4CB11BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 1060A 4050W

0
FP20R06W1E3BOMA1

FP20R06W1E3BOMA1

IR (Infineon Technologies)

IGBT MODULE 600V 27A 94W

16
FF1400R17IP4PBOSA1

FF1400R17IP4PBOSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 1400A

0
FF300R12ME4B11BPSA1

FF300R12ME4B11BPSA1

IR (Infineon Technologies)

IGBT MOD 1200V 450A 1600W

10
FP15R12W1T4BOMA1

FP15R12W1T4BOMA1

IR (Infineon Technologies)

IGBT MOD 1200V 28A 130W

23
F4150R12KS4BOSA1

F4150R12KS4BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 180A 960W

10
FZ600R12KP4HOSA1

FZ600R12KP4HOSA1

IR (Infineon Technologies)

FZ600R12 - IGBT MODULE

22
FP100R12W3T7B11BPSA1

FP100R12W3T7B11BPSA1

IR (Infineon Technologies)

LOW POWER EASY

0
FF50R12RT4HOSA1

FF50R12RT4HOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 50A 285W

41
FS25R12KE3GBOSA1

FS25R12KE3GBOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 40A 145W

0
FF600R12KE4BOSA1

FF600R12KE4BOSA1

IR (Infineon Technologies)

IGBT MODULE 1200V 600A

85
FP10R12W1T7B11BOMA1

FP10R12W1T7B11BOMA1

IR (Infineon Technologies)

IGBT MODULE 1200V 10A 20MW EASY

32
FF500R17KE4BOSA1

FF500R17KE4BOSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 500A

0
FD800R17KE3B2NOSA1

FD800R17KE3B2NOSA1

IR (Infineon Technologies)

FD800R17 - IGBT-MODULE

46
DF100R07W1H5FPB54BPSA2

DF100R07W1H5FPB54BPSA2

IR (Infineon Technologies)

IGBT MOD 650V 40A 20MW

29
F3L100R12W2H3B11BPSA1

F3L100R12W2H3B11BPSA1

IR (Infineon Technologies)

IGBT MOD 1200V 100A 375W

5
FZ1200R45KL3B5NOSA1

FZ1200R45KL3B5NOSA1

IR (Infineon Technologies)

IGBT MODULE 4500V 1200A

1
F3L400R12PT4B26BOSA1

F3L400R12PT4B26BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 600A 2150W

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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