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Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
FS20R06W1E3BOMA1

FS20R06W1E3BOMA1

IR (Infineon Technologies)

IGBT MODULE 600V 35A 135W

0
FZ1200R12HE4HOSA2

FZ1200R12HE4HOSA2

IR (Infineon Technologies)

IGBT MODULE 1200V 1200A

0
FZ600R65KE3NOSA1

FZ600R65KE3NOSA1

IR (Infineon Technologies)

IGBT MOD 6500V 1200A 2400W

0
F475R07W1H3B11ABOMA1

F475R07W1H3B11ABOMA1

IR (Infineon Technologies)

F475R07 - AUTOMOTIVE IGBT MODULE

7
FF600R12ME4PBOSA1

FF600R12ME4PBOSA1

IR (Infineon Technologies)

IGBT MODULE VCES 600V 600A

0
FZ800R12KL4CNOSA1

FZ800R12KL4CNOSA1

IR (Infineon Technologies)

IGBT MODULE

102
FP50R06KE3BOSA1

FP50R06KE3BOSA1

IR (Infineon Technologies)

IGBT MODULE 600V 60A 190W

4
FS3L30R07W2H3FB11BPSA2

FS3L30R07W2H3FB11BPSA2

IR (Infineon Technologies)

IGBT MOD 650V 30A 20MW

7
FF300R12KS4PHOSA1

FF300R12KS4PHOSA1

IR (Infineon Technologies)

IGBT MODULE 1200V 300A

0
FF200R12KT3HOSA1

FF200R12KT3HOSA1

IR (Infineon Technologies)

IGBT MODULE 1200V 1050W

40
FP15R12W1T7PB3BPSA1

FP15R12W1T7PB3BPSA1

IR (Infineon Technologies)

LOW POWER EASY

0
FF1800R12IE5BPSA1

FF1800R12IE5BPSA1

IR (Infineon Technologies)

IGBT MOD 1200V 1800A 20MW

2
DDB6U84N16RRBOSA1

DDB6U84N16RRBOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 50A 350W

56
FD800R33KF2CKNOSA1

FD800R33KF2CKNOSA1

IR (Infineon Technologies)

IGBT MODULE 3300V 9600W

0
FZ1800R17HP4B29BOSA2

FZ1800R17HP4B29BOSA2

IR (Infineon Technologies)

FZ1800R17 - IGBT MODULE

88
BYM300B170DN2HOSA1

BYM300B170DN2HOSA1

IR (Infineon Technologies)

IGBT MOD 650V 40A 20MW

0
DF200R12PT4B6BOSA1

DF200R12PT4B6BOSA1

IR (Infineon Technologies)

DFXR12P - IGBT MODULE

90
6PS03012E33G34160NOSA1

6PS03012E33G34160NOSA1

IR (Infineon Technologies)

IGBT MODULE 300V 234A 2100W

0
6MS20017E43W38170NOSA1

6MS20017E43W38170NOSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 1200A

0
FZ1200R17HP4B2BOSA2

FZ1200R17HP4B2BOSA2

IR (Infineon Technologies)

IGBT MOD 1700V 1200A 7800W

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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