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Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
FF450R17ME4B11BOSA1

FF450R17ME4B11BOSA1

IR (Infineon Technologies)

IGBT MOD 1700V 600A 2500W

0
FP35R12KT4PBPSA1

FP35R12KT4PBPSA1

IR (Infineon Technologies)

IGBT MOD 1200V 70A 20MW

0
FS950R08A6P2BBPSA1

FS950R08A6P2BBPSA1

IR (Infineon Technologies)

IGBT MODULE 750V 950A

14
6PS18012E4FG42192NWSA1

6PS18012E4FG42192NWSA1

IR (Infineon Technologies)

IGBT MODULE STACKS IPM

0
FF650R17IE4PBOSA1

FF650R17IE4PBOSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 650A

0
FP100R06KE3B16BOSA1

FP100R06KE3B16BOSA1

IR (Infineon Technologies)

IGBT MODULE

310
FZ2400R12HP4B9HOSA2

FZ2400R12HP4B9HOSA2

IR (Infineon Technologies)

FZ2400R12 - IGBT MODULE

166
FF800R17KP4B2NOSA2

FF800R17KP4B2NOSA2

IR (Infineon Technologies)

FF800R17 - IGBT MODULE

4
FF450R12KE4HOSA1

FF450R12KE4HOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 520A 2400W

7
FP50R12KE3BOSA1

FP50R12KE3BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 75A 280W

1
FP50R12KT4B16BOSA1

FP50R12KT4B16BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 100A 280W

0
FS400R12A2T4IBPSA1

FS400R12A2T4IBPSA1

IR (Infineon Technologies)

IGBT MOD 1200V 400A 1500W

0
DF600R12IP4DBOSA1

DF600R12IP4DBOSA1

IR (Infineon Technologies)

DFXR12F - IGBT MODULE

9
FS150R07N3E4_B11

FS150R07N3E4_B11

IR (Infineon Technologies)

IGBT MODULE

160
FP75R12N2T4B11BPSA1

FP75R12N2T4B11BPSA1

IR (Infineon Technologies)

IGBT MODULE

404
F3L200R07W2S5FB11BOMA1

F3L200R07W2S5FB11BOMA1

IR (Infineon Technologies)

IGBT MODULE LOW POWER EASY

15
FZ1200R33HE3BPSA1

FZ1200R33HE3BPSA1

IR (Infineon Technologies)

IGBT MODULE 3300V 1200A

0
FS200R12KT4RBOSA1

FS200R12KT4RBOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 280A 1000W

21
F3L15MR12W2M1B69BOMA1

F3L15MR12W2M1B69BOMA1

IR (Infineon Technologies)

LOW POWER EASY

0
FS400R07A3E3BOMA1

FS400R07A3E3BOMA1

IR (Infineon Technologies)

IGBT MODULE

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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