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Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
FP10R12W1T4PBPSA1

FP10R12W1T4PBPSA1

IR (Infineon Technologies)

IGBT MOD 1200V 20A 20MW

32
FS75R12W2T7B11BOMA1

FS75R12W2T7B11BOMA1

IR (Infineon Technologies)

IGBT MOD 1200V 75A

23
FS150R17PE4BOSA1

FS150R17PE4BOSA1

IR (Infineon Technologies)

IGBT MOD 1700V 150A 835W

0
FS15R06XL4BOMA1

FS15R06XL4BOMA1

IR (Infineon Technologies)

IGBT MODULE

10
FF300R12KE4EHOSA1

FF300R12KE4EHOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 460A 1600W

0
FD16001200R17HP4KB2BOSA1

FD16001200R17HP4KB2BOSA1

IR (Infineon Technologies)

FD1600 - IGBT MODULE

25
FP10R12W1T4PB11BPSA1

FP10R12W1T4PB11BPSA1

IR (Infineon Technologies)

IGBT MOD 1200V 20A 20MW

0
DDB6U100N16RRBOSA1

DDB6U100N16RRBOSA1

IR (Infineon Technologies)

IGBT, 50A, 1200V, N-CHANNEL

26
F1225R12KT4GBOSA1

F1225R12KT4GBOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 25A 160W

10
DF150R12RT4HOSA1

DF150R12RT4HOSA1

IR (Infineon Technologies)

DFXR12I - IGBT MODULE

1067
FP25R12W2T4BOMA1

FP25R12W2T4BOMA1

IR (Infineon Technologies)

IGBT MOD 1200V 39A 175W

4
FP15R12W1T4PBPSA1

FP15R12W1T4PBPSA1

IR (Infineon Technologies)

IGBT MOD 1200V 30A 20MW

27
FP25R12KT3BPSA1

FP25R12KT3BPSA1

IR (Infineon Technologies)

LOW POWER ECONO

0
FF300R17ME4BOSA1

FF300R17ME4BOSA1

IR (Infineon Technologies)

IGBT MOD 1700V 375A 1800W

10
FZ1000R33HE3BPSA1

FZ1000R33HE3BPSA1

IR (Infineon Technologies)

IGBT MODULE 3300V 1000A

2
FS75R12KT4B11BOSA1

FS75R12KT4B11BOSA1

IR (Infineon Technologies)

FS75R12 - IGBT MODULE

20
DD800S45KL3B5NPSA1

DD800S45KL3B5NPSA1

IR (Infineon Technologies)

IGBT MOD 4500V 800A 1600W

0
FF23MR12W1M1PB11BPSA1

FF23MR12W1M1PB11BPSA1

IR (Infineon Technologies)

LOW POWER EASY

0
FD900R12IP4DVBOSA1

FD900R12IP4DVBOSA1

IR (Infineon Technologies)

FD900R12 - INSULATED GATE BIPOLA

3
FF450R12ME4BOSA1

FF450R12ME4BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 675A 2250W

1

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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