DF1000R17IE4BOSA1

Manufacturer Part DF1000R17IE4BOSA1
Manufacturer IR (Infineon Technologies)
Description IGBT MODULE 1700V 6250W
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet DF1000R17IE4BOSA1 PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 10 - Dec 14 2025
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:-
Package:Bulk
Part Status:Active
IGBT Type:-
Configuration:Single
Voltage - Collector Emitter Breakdown (Max):1700 V
Current - Collector (Ic) (Max):-
Power - Max:6250 W
Vce(on) (Max) @ Vge, Ic:2.45V @ 15V, 1000A
Current - Collector Cutoff (Max):5 mA
Input Capacitance (Cies) @ Vce:81 nF @ 25 V
Input:Standard
NTC Thermistor:Yes
Operating Temperature:-40°C ~ 150°C
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
More Information
DF1000R17IE4BOSA1
DF1000R17IE4BOSA1
IR (Infineon Technologies) DF1000R17IE4BOSA1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
DF1000R17IE4BOSA1 PDF
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