DF75R12W1H4FB11BOMA2

Manufacturer Part DF75R12W1H4FB11BOMA2
Manufacturer IR (Infineon Technologies)
Description IGBT MOD 1200V 25A 20MW
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet DF75R12W1H4FB11BOMA2 PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 09 - Dec 13 2025
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:EasyPACK™ 1B
Package:Tray
Part Status:Last Time Buy
IGBT Type:-
Configuration:Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):25 A
Power - Max:20 mW
Vce(on) (Max) @ Vge, Ic:2.65V @ 15V, 25A
Current - Collector Cutoff (Max):1 mA
Input Capacitance (Cies) @ Vce:2 nF @ 25 V
Input:Standard
NTC Thermistor:Yes
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
More Information
DF75R12W1H4FB11BOMA2
DF75R12W1H4FB11BOMA2
IR (Infineon Technologies) DF75R12W1H4FB11BOMA2 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
DF75R12W1H4FB11BOMA2 PDF
Same Series
DF75R12W1H4FB11BOMA2
DF75R12W1H4FB11BOMA2
IGBT MOD 1200V 25A 20MW
IR (Infineon Technologies)
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Shipping
Shipping Type Lead Time
DHL 2-5 days
Fedex 2-5 days
UPS 2-5 days
TNT 2-6 days
EMS 3-7 days
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