BSM150GB120DN2HOSA1

Manufacturer Part BSM150GB120DN2HOSA1
Manufacturer IR (Infineon Technologies)
Description IGBT MOD 1200V 210A 1250W
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 12 - Dec 16 2025
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:-
Package:Tray
Part Status:Not For New Designs
IGBT Type:-
Configuration:Half Bridge
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):210 A
Power - Max:1250 W
Vce(on) (Max) @ Vge, Ic:3V @ 15V, 150A
Current - Collector Cutoff (Max):2.8 mA
Input Capacitance (Cies) @ Vce:11 nF @ 25 V
Input:Standard
NTC Thermistor:No
Operating Temperature:150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
More Information
BSM150GB120DN2HOSA1
BSM150GB120DN2HOSA1
IR (Infineon Technologies) BSM150GB120DN2HOSA1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
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