Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
APTGT35A120T1G

APTGT35A120T1G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 55A 208W SP1

0

BSM150GB170DLCE3256HDLA1

BSM150GB170DLCE3256HDLA1

IR (Infineon Technologies)

BSM150GB170 - INSULATED GATE BIP

47

MIXA60W1200TED

MIXA60W1200TED

Wickmann / Littelfuse

IGBT MODULE 1200V 85A 290W E2

0

APTGT75X60T3G

APTGT75X60T3G

Roving Networks / Microchip Technology

IGBT MODULE 600V 100A 250W SP3

0

MIXA150R1200VA

MIXA150R1200VA

Wickmann / Littelfuse

IGBT MOD 1200V 220A 695W V1A-PAK

0

F475R07W2H3B51BOMA1

F475R07W2H3B51BOMA1

IR (Infineon Technologies)

IGBT, 75A, 650V, N-CHANNEL

180

IXA60IF1200NA

IXA60IF1200NA

Wickmann / Littelfuse

IGBT MOD 1200V 88A 290W SOT227B

43

FS100R07N3E4_B11

FS100R07N3E4_B11

IR (Infineon Technologies)

IGBT, 100A, 650V, N-CHANNEL

140

FPF1C2P5MF07AM

FPF1C2P5MF07AM

Sanyo Semiconductor/ON Semiconductor

IGBT MODULE 620V 39A 231W F1

0

APTGT50DH170TG

APTGT50DH170TG

Roving Networks / Microchip Technology

IGBT MODULE 1700V 75A 312W SP4

0

FZ3600R17KE3

FZ3600R17KE3

IR (Infineon Technologies)

IGBT MODULE

14

FF300R12ME4PBOSA1

FF300R12ME4PBOSA1

IR (Infineon Technologies)

IGBT MODULE

2

BSM100GD120DN2BOSA1

BSM100GD120DN2BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 150A 680W

0

MG17150D-BN4MM

MG17150D-BN4MM

Wickmann / Littelfuse

IGBT MODULE 1700V 250A 890W D3

0

BSM50GP60B2BOSA1

BSM50GP60B2BOSA1

IR (Infineon Technologies)

IGBT MODULE

0

MWI80-12T6K

MWI80-12T6K

Wickmann / Littelfuse

IGBT MODULE 1200V 80A 270W E1

170

FS3L50R07W2H3B11BPSA1

FS3L50R07W2H3B11BPSA1

IR (Infineon Technologies)

IGBT MODULE 650V 75A 215W

0

DF450R17N2E4PB11BPSA1

DF450R17N2E4PB11BPSA1

IR (Infineon Technologies)

IGBT MODULE LOW POWER ECONO

0

FF225R12ME3BOSA1

FF225R12ME3BOSA1

IR (Infineon Technologies)

IGBT MODULE

183

APTGT150A120G

APTGT150A120G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 220A 690W SP6

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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