Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
FZ800R16KF4NOSA1

FZ800R16KF4NOSA1

IR (Infineon Technologies)

IGBT MODULE

20

APT100GN120J

APT100GN120J

Roving Networks / Microchip Technology

IGBT MOD 1200V 153A 446W ISOTOP

0

NXH35C120L2C2S1G

NXH35C120L2C2S1G

Sanyo Semiconductor/ON Semiconductor

IGBT MOD 1200V 35A 26DIP

0

FP25R12U1T4BPSA1

FP25R12U1T4BPSA1

IR (Infineon Technologies)

IGBT MOD 1200V 39A 190W

0

F3L400R07ME4B22BOSA1

F3L400R07ME4B22BOSA1

IR (Infineon Technologies)

F3L400R07 - IGBT MODULE

20

IXGN400N60A3

IXGN400N60A3

Wickmann / Littelfuse

IGBT MOD 600V 400A 830W SOT227B

10

APTGLQ80HR120CT3G

APTGLQ80HR120CT3G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 150A 500W SP3

0

APTGTQ100H65T3G

APTGTQ100H65T3G

Roving Networks / Microchip Technology

IGBT MODULE 650V 100A 250W SP3F

0

APTGT600DU60G

APTGT600DU60G

Roving Networks / Microchip Technology

IGBT MODULE 600V 700A 2300W SP6

0

FPF2C8P2NL07A

FPF2C8P2NL07A

INSULATED GATE BIPOLAR TRANSISTO

131

APTGT50DDA60T3G

APTGT50DDA60T3G

Roving Networks / Microchip Technology

IGBT MODULE 600V 80A 176W SP3

0

MWI30-06A7T

MWI30-06A7T

Wickmann / Littelfuse

IGBT MODULE 600V 45A 140W E2

0

BSM75GD120DN2BOSA1

BSM75GD120DN2BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 103A 520W

0

APTGT50DU120TG

APTGT50DU120TG

Roving Networks / Microchip Technology

IGBT MODULE 1200V 75A 277W SP4

0

MUBW35-06A6K

MUBW35-06A6K

Wickmann / Littelfuse

IGBT MODULE 600V 42A 130W E1

0

BSM200GA120DN2FS

BSM200GA120DN2FS

IR (Infineon Technologies)

IGBT MODULE

6

MTC120W55GC-SMD

MTC120W55GC-SMD

Wickmann / Littelfuse

IGBT MOD MOSFET SIXPACK ISOPLUS

0

DDB6U180N16RRBPSA1

DDB6U180N16RRBPSA1

IR (Infineon Technologies)

IGBT MODULE

0

APTGLQ300SK120G

APTGLQ300SK120G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 500A 1500W SP6

0

APTGL90H120T3G

APTGL90H120T3G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 110A 385W SP3

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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