Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
FS225R17KE3BOSA1

FS225R17KE3BOSA1

IR (Infineon Technologies)

IGBT MODULE

341

APTGT300DU60G

APTGT300DU60G

Roving Networks / Microchip Technology

IGBT MODULE 600V 430A 1150W SP6

0

FF200R12KE4PHOSA1

FF200R12KE4PHOSA1

IR (Infineon Technologies)

IGBT MODULE 1200V 200A

0

FD1000R33HL3KBPSA1

FD1000R33HL3KBPSA1

IR (Infineon Technologies)

FD1000R33 - IGBT MODULE

42

FP15R06W1E3B11BOMA1

FP15R06W1E3B11BOMA1

IR (Infineon Technologies)

FP15R06 - IGBT MODULE

24

FF400R33KF2CNOSA1

FF400R33KF2CNOSA1

IR (Infineon Technologies)

IGBT MOD 3300V 660A 4800W

0

FF225R12ME4PB11BPSA1

FF225R12ME4PB11BPSA1

IR (Infineon Technologies)

FFXR12M4P - IGBT MODULE

135

F3L300R12MT4PB22BPSA1

F3L300R12MT4PB22BPSA1

IR (Infineon Technologies)

F3L300R12 - IGBT MODULE

9

2PS12017E34W32132NOSA1

2PS12017E34W32132NOSA1

IR (Infineon Technologies)

MODULE IGBT STACK A-PS4-1

0

DF1000R17IE4BOSA1

DF1000R17IE4BOSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 6250W

0

F3L150R12W2H3B11BPSA1

F3L150R12W2H3B11BPSA1

IR (Infineon Technologies)

IGBT MOD 1200V 75A 500W

15

FZ2400R17HP4B2BOSA2

FZ2400R17HP4B2BOSA2

IR (Infineon Technologies)

IGBT MODULE 1700V 4800A

0

MG06200S-BN4MM

MG06200S-BN4MM

Wickmann / Littelfuse

IGBT MODULE 600V 200A 600W S3

47

APT80GP60JDQ3

APT80GP60JDQ3

Roving Networks / Microchip Technology

IGBT 600V 151A 462W SOT227

0

FS100R12KS4BOSA1

FS100R12KS4BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 130A 660W

0

FS150R06KE3BOSA1

FS150R06KE3BOSA1

IR (Infineon Technologies)

IGBT MOD 600V 150A 430W

26

FZ750R65KE3NOSA1

FZ750R65KE3NOSA1

IR (Infineon Technologies)

IGBT MOD 6500V 750A A-IHV190-6

2

A2C25S12M3

A2C25S12M3

STMicroelectronics

IGBT MOD 1200V 25A 197W ACEPACK2

5

GSID200A120S3B1

GSID200A120S3B1

SemiQ

IGBT MODULE 1200V 400A 1595W D3

0

APT150GN60J

APT150GN60J

Roving Networks / Microchip Technology

IGBT MOD 600V 220A 536W ISOTOP

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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