Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
FF300R12KE4PHOSA1

FF300R12KE4PHOSA1

IR (Infineon Technologies)

IGBT MODULE 1200V 300A

0

FF200R17KE3HOSA1

FF200R17KE3HOSA1

IR (Infineon Technologies)

IGBT MOD 1700V 310A 1250W

49

FF600R12ME4EB11BOSA1

FF600R12ME4EB11BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 995A 4050W

18

MG06150S-BN4MM

MG06150S-BN4MM

Wickmann / Littelfuse

IGBT MODULE 600V 150A 500W S3

0

FZ1200R12HP4HOSA2

FZ1200R12HP4HOSA2

IR (Infineon Technologies)

IGBT MOD 1200V 1790A 7150W

0

F3L200R12W2H3PB11BPSA1

F3L200R12W2H3PB11BPSA1

IR (Infineon Technologies)

MODULE IGBT 1200V EASY2B-2

0

FP50R12KT4BOSA1

FP50R12KT4BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 50A 280W

5

FS50R07W1E3B11ABOMA1

FS50R07W1E3B11ABOMA1

IR (Infineon Technologies)

IGBT MODULES

72

FF900R12IE4VPBOSA1

FF900R12IE4VPBOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 900A 20MW

0

FP15R12W1T4B3BOMA1

FP15R12W1T4B3BOMA1

IR (Infineon Technologies)

IGBT MOD 1200V 28A 130W

23

F3L200R07PE4BOSA1

F3L200R07PE4BOSA1

IR (Infineon Technologies)

F3L200R07 - IGBT MODULE

7

FP25R12W2T4B11BOMA1

FP25R12W2T4B11BOMA1

IR (Infineon Technologies)

IGBT MOD 1200V 39A 175W

24

FF600R12ME4B11BPSA1

FF600R12ME4B11BPSA1

IR (Infineon Technologies)

IGBT MODULE 1200V 4050W

0

FF1400R17IP4BOSA1

FF1400R17IP4BOSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 1400A

2

FF600R17KE3B2NOSA1

FF600R17KE3B2NOSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 4300W

0

FP75R17N3E4B11BPSA1

FP75R17N3E4B11BPSA1

IR (Infineon Technologies)

FP75R17 - IGBT MODULE

25

APTGT400DU120G

APTGT400DU120G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 560A 1785W SP6

0

FP15R12W1T4PB11BPSA1

FP15R12W1T4PB11BPSA1

IR (Infineon Technologies)

IGBT MOD 1200V 30A 20MW

0

MG06300D-BN4MM

MG06300D-BN4MM

Wickmann / Littelfuse

IGBT MODULE 600V 300A 940W D3

14

FF400R06KE3HOSA1

FF400R06KE3HOSA1

IR (Infineon Technologies)

IGBT MOD 600V 500A 1250W

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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