Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
FS100R12KT4BOSA1

FS100R12KT4BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 100A 515W

0

APTGT35H120T3G

APTGT35H120T3G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 55A 208W SP3

0

IFS150B17N3E4PB11BPSA1

IFS150B17N3E4PB11BPSA1

IR (Infineon Technologies)

IGBT MOD 1700V 300A 20MW

0

VS-GB15XP120KTPBF

VS-GB15XP120KTPBF

Vishay General Semiconductor – Diodes Division

IGBT MODULE 1200V 30A 187W MTP

0

DF200R12W1H3FB11BOMA1

DF200R12W1H3FB11BOMA1

IR (Infineon Technologies)

IGBT MOD 1200V 30A 20MW

0

FF800R12KF4

FF800R12KF4

IR (Infineon Technologies)

IGBT MOD 1200V 800A 5000W

0

BSM25GD120DN2E3224BOSA1

BSM25GD120DN2E3224BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 35A 200W

0

MWI35-12A7

MWI35-12A7

Wickmann / Littelfuse

IGBT MODULE 1200V 62A 280W E2

0

APTGT100DH120TG

APTGT100DH120TG

Roving Networks / Microchip Technology

IGBT MODULE 1200V 140A 480W SP4

0

FZ250R65KE3NPSA1

FZ250R65KE3NPSA1

IR (Infineon Technologies)

IGBT MOD 6500V 500A 4800W

4

BSM300GA120DLCSHOSA1

BSM300GA120DLCSHOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 570A 2250W

0

MIXG330PF1200TSF

MIXG330PF1200TSF

Wickmann / Littelfuse

IGBT MODULE - PHASELEG SIMBUS F-

39

APTGT200A120D3G

APTGT200A120D3G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 300A 1040W D3

0

FF400R12KT3EHOSA1

FF400R12KT3EHOSA1

IR (Infineon Technologies)

FF400R12 - IGBT MODULE

398

FD1600/1200R17KF6C_B2

FD1600/1200R17KF6C_B2

IR (Infineon Technologies)

IGBT MODULE VCES 1700V 1600A

0

APTGT400DA120G

APTGT400DA120G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 560A 1785W SP6

0

FZ1600R17KF6CB2S2NOSA1

FZ1600R17KF6CB2S2NOSA1

IR (Infineon Technologies)

FZ1600R17 - INSULATED GATE BIPOL

14

FP50R12N2T4B16BOSA1

FP50R12N2T4B16BOSA1

IR (Infineon Technologies)

IGBT MODULE

106

APTGT300A170D3G

APTGT300A170D3G

Roving Networks / Microchip Technology

IGBT MODULE 1700V 530A 1470W D3

0

FF450R33T3E3B5P3BPSA1

FF450R33T3E3B5P3BPSA1

IR (Infineon Technologies)

IHV IHM T XHP 3 3-6 5K

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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