Transistors - IGBTs

Transistors - IGBTs - Modules

Part Number	Description / PDF	Quantity
APTGLQ40DDA120CT3G Roving Networks / Microchip Technology	IGBT MODULE 1200V 75A 250W SP6	0
APTGT300SK60G Roving Networks / Microchip Technology	IGBT MODULE 600V 430A 1150W SP6	0
FS10R06VL4_B2 IR (Infineon Technologies)	IGBT MODULE	24
FP10R12W1T7PB3BPSA1 IR (Infineon Technologies)	LOW POWER EASY	0
MID150-12A4 Wickmann / Littelfuse	IGBT MOD 1200V 180A 760W Y3DCB	44
APTCV50H60T3G Roving Networks / Microchip Technology	IGBT MODULE 600V 80A 176W SP3	0
APTGT30H170T3G Roving Networks / Microchip Technology	IGBT MODULE 1700V 45A 210W SP3	0
FS300R120E4B0SA1 IR (Infineon Technologies)	IGBT MODULE	1
BSM150GB170DN2HOSA1 IR (Infineon Technologies)	IGBT MODULE	30
MIXA81H1200EH Wickmann / Littelfuse	IGBT MODULE 1200V 120A 390W E3	0
APTGT300TL65G Roving Networks / Microchip Technology	IGBT MODULE 650V SP6C	0
FF600R12KF4NOSA1 IR (Infineon Technologies)	IGBT MODULE	28
APTGT150H170G Microsemi	IGBT MODULE 1700V 250A 890W SP6	0
MWI15-12A7 Wickmann / Littelfuse	IGBT MODULE 1200V 30A 140W E2	724
FP10R12KE3BOMA1 IR (Infineon Technologies)	MOD IGBT LOW PWR EASY2-1	0
APTGT150A120TG Roving Networks / Microchip Technology	IGBT MODULE 1200V 220A 690W SP4	0
FMS6G20US60	IGBT, 20A, 600V, N-CHANNEL	0
MII300-12A4 Wickmann / Littelfuse	IGBT MOD 1200V 330A 1380W Y3DCB	36
BSM200GA120DN2HOSA1 IR (Infineon Technologies)	IGBT MOD 1200V 300A 1550W	0
FZ500R65KE3C1NPSA1 IR (Infineon Technologies)	IHV IHM T XHP 3 3-6 5K	0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Standard IGBT Modules	General-purpose, balanced conduction/switching losses	Industrial motor drives, HVAC systems
High-Speed IGBTs	Optimized for switching frequencies >20kHz	Welding inverters, induction heating
Enhanced Dynamic IGBTs	Reduced tail current for lower switching losses	Electric vehicle (EV) on-board chargers
Trench IGBTs	Vertical trench gate structure for improved efficiency	Solar inverters, energy storage systems
Double-Sided Cooling Modules	Thermal management with cooling on both sides	High-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al₂O₃ or Si₃N₄). Key structural elements include:

Chip-level integration of IGBT and diode cells
DBC (Direct Bonded Copper) substrate for thermal conductivity
Thermoplastic/epoxy encapsulation for insulation
Aluminum wire bonds for die interconnection
Integrated temperature sensors in advanced modules

4. Key Technical Specifications

Parameter	Description	Importance
Rated Collector Current (I_C)	Maximum continuous operating current	Determines power handling capability
Breakdown Voltage (V_CE)	Max voltage before conduction	System voltage rating compatibility
Conduction Voltage Drop	Voltage loss during on-state	Impacts efficiency and thermal design
Switching Losses (E_on/E_off)	Energy loss during state transitions	Dictates maximum switching frequency
Operating Temperature Range	Valid junction temperature range	Reliability and lifespan factor
Isolation Voltage	Dielectric strength between layers	Safety compliance for high-voltage systems

5. Application Areas

Industrial: Motor drives, CNC machines, welding equipment
Automotive: EV traction inverters, PHEV battery management
Energy: Solar PV inverters, wind turbine converters
Consumer: High-end home appliances with variable speed drives
Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
Infineon	FF600R12KE4	600A/1200V, 3-level topology, 175 C rating
ON Semiconductor	NVHL015AN	150A/1200V, automotive qualified
Mitsubishi Electric	CM400DY-34A	400A/1700V, double-sided cooling
Fuji Electric	2MBI150XAA120-50	150A/1200V, intelligent power module
STMicroelectronics	STGF8NC60KD	8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

Matching voltage/current ratings with system requirements
Switching frequency vs. conduction loss trade-off
Thermal management capabilities (R_th values)
Short-circuit withstand capability
Package dimensions and cooling interface compatibility
Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

Transition to SiC/GaN hybrid modules for higher efficiency
Development of 3D packaging for reduced parasitic inductance
Integration of gate drivers and sensors in smart modules
Growing adoption in EV charging infrastructure (800V+ systems)
Advancements in sintering technology for die attach reliability