Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
MG17300D-BN4MM

MG17300D-BN4MM

Wickmann / Littelfuse

IGBT MODULE 1700V 400A 1450W D3

0

APTGL120TDU120TPG

APTGL120TDU120TPG

Roving Networks / Microchip Technology

IGBT MODULE 1200V 140A 517W SP6P

0

MIXA61WB1200TEH

MIXA61WB1200TEH

Wickmann / Littelfuse

IGBT MODULE - CBI E3-PACK-PFP

80

MIXG240W1200TEH

MIXG240W1200TEH

Wickmann / Littelfuse

IGBT MODULE - SIXPACK E3-PACK-PF

0

MIXG240W1200PZ-PC

MIXG240W1200PZ-PC

Wickmann / Littelfuse

IGBT MOD MIXG240W1200PZTEH-PC

0

APTGT300DH60G

APTGT300DH60G

Roving Networks / Microchip Technology

IGBT MODULE 600V 430A 1150W SP6

0

AIM5C05B060NH

AIM5C05B060NH

Alpha and Omega Semiconductor, Inc.

IGBT MODULE IPM 3 PHASE

0

PS2GFANSET30599NOSA1

PS2GFANSET30599NOSA1

IR (Infineon Technologies)

MOD IGBT STACK PSAO-1

0

BSM50GD120DN2BOSA1

BSM50GD120DN2BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 72A 350W

0

MWI50-12A7

MWI50-12A7

Wickmann / Littelfuse

IGBT MODULE 1200V 85A 350W E2

0

APTGT100DH60TG

APTGT100DH60TG

Roving Networks / Microchip Technology

IGBT MODULE 600V 150A 340W SP4

0

FD-DF80R12W1H3_B52

FD-DF80R12W1H3_B52

IR (Infineon Technologies)

IGBT MOD 1200V 40A 215W

0

APTGT50SK170TG

APTGT50SK170TG

Roving Networks / Microchip Technology

IGBT MODULE 1700V 75A 312W SP4

0

FZ400R17KE3S4HOSA1

FZ400R17KE3S4HOSA1

IR (Infineon Technologies)

IGBT MODULE

40

900546CHOSA1

900546CHOSA1

IR (Infineon Technologies)

IGBT MODULE

0

MIXG490PF1200PTSF

MIXG490PF1200PTSF

Wickmann / Littelfuse

IGBT MODULE - PHASELEG SIMBUS F-

0

FD600R17KE3KB5NOSA1

FD600R17KE3KB5NOSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 4300W

0

FS800R07A2E3IB31BPSA1

FS800R07A2E3IB31BPSA1

IR (Infineon Technologies)

IGBT MODULE MED PWR ECOHY2-1

0

APTGT200DA120D3G

APTGT200DA120D3G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 300A 1050W D3

0

APTGT450DA60G

APTGT450DA60G

Roving Networks / Microchip Technology

IGBT MODULE 600V 550A 1750W SP6

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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