Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
APT35GP120J

APT35GP120J

Roving Networks / Microchip Technology

IGBT MOD 1200V 64A 284W ISOTOP

2

FP10R12W1T4BOMA1

FP10R12W1T4BOMA1

IR (Infineon Technologies)

IGBT MOD 1200V 20A 105W

22

2ED300C17SROHSBPSA1

2ED300C17SROHSBPSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 30A

36

F3L300R12MT4B23BOSA1

F3L300R12MT4B23BOSA1

IR (Infineon Technologies)

F3L300R12 - IGBT MODULE

40

FMG1G100US60L

FMG1G100US60L

IGBT, 100A, 600V, N-CHANNEL

46

FD16001200R17HP4B2BOSA2

FD16001200R17HP4B2BOSA2

IR (Infineon Technologies)

IGBT MODULE VCES 1700V 1600A

0

DF200R12KE3HOSA1

DF200R12KE3HOSA1

IR (Infineon Technologies)

IGBT MODULE 1200V 1040W

0

FF650R17IE4DB2BOSA1

FF650R17IE4DB2BOSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 4150W

0

FZ2400R12HE4B9HOSA2

FZ2400R12HE4B9HOSA2

IR (Infineon Technologies)

FZ2400R12 - IGBT MODULE

109

MG12300D-BN2MM

MG12300D-BN2MM

Wickmann / Littelfuse

IGBT MODULE 1200V 480A 1450W D3

0

FS400R12A2T4BOSA1

FS400R12A2T4BOSA1

IR (Infineon Technologies)

IGBT MODULES

3

IFF2400P17AE4BPSA1

IFF2400P17AE4BPSA1

IR (Infineon Technologies)

IFF2400P17 - AC/DC POWER MODULES

5

F3L25R12W1T4B27BOMA1

F3L25R12W1T4B27BOMA1

IR (Infineon Technologies)

MODULE IGBT 1200V EASY1B-2

24

FS100R17N3E4BOSA1

FS100R17N3E4BOSA1

IR (Infineon Technologies)

IGBT MOD 1700V 100A 600W

7

FZ500R65KE3NOSA1

FZ500R65KE3NOSA1

IR (Infineon Technologies)

IGBT MODULE 6500V 1000A

0

FZ400R12KP4HOSA1

FZ400R12KP4HOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 400A 2400W

0

F475R12KS4B11BOSA1

F475R12KS4B11BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 100A 500W

0

APTGLQ100A65T1G

APTGLQ100A65T1G

Roving Networks / Microchip Technology

IGBT MODULE 650V 200A 350W SP1

0

APTGLQ200HR120G

APTGLQ200HR120G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 300A 1000W SP6

0

GSID200A170S3B1

GSID200A170S3B1

SemiQ

IGBT MODULE 1200V 400A 1630W D3

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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