Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
FS50R12KT4PB11BPSA1

FS50R12KT4PB11BPSA1

IR (Infineon Technologies)

IGBT MOD 1200V 100A 20MW

0

IXBN75N170A

IXBN75N170A

Wickmann / Littelfuse

IGBT MOD 1700V 75A 625W SOT227B

0

FS820R08A6P2BBPSA1

FS820R08A6P2BBPSA1

IR (Infineon Technologies)

IGBT MODULE PACK DRV HYBRIDD-1

0

FZ1200R17HE4PHPSA1

FZ1200R17HE4PHPSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 1200A

0

FS500R17OE4DBOSA1

FS500R17OE4DBOSA1

IR (Infineon Technologies)

IGBT MOD 1700V 740A 3000W

4

APTGL475A120D3G

APTGL475A120D3G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 610A 2080W D3

0

APTGL325A120D3G

APTGL325A120D3G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 420A 1500W D3

0

FS25R12KT3BOSA1

FS25R12KT3BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 40A 145W

10

FD500R65KE3KNOSA1

FD500R65KE3KNOSA1

IR (Infineon Technologies)

IGBT MOD 6500V 500A 9600W

0

6MS24017P43W41646NOSA1

6MS24017P43W41646NOSA1

IR (Infineon Technologies)

IGBT MODULE 1700V STACK A-MS3-1

1

6MS10017E41W36460BOSA1

6MS10017E41W36460BOSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 600A

0

A1P50S65M2-F

A1P50S65M2-F

STMicroelectronics

IGBT MOD 650V 50A 208W ACEPACK1

0

FP15R12W1T7B11BOMA1

FP15R12W1T7B11BOMA1

IR (Infineon Technologies)

IGBT MODULE LOW POWER EASY

17

DDB6U180N16RRB37BOSA1

DDB6U180N16RRB37BOSA1

IR (Infineon Technologies)

IGBT MODULE

0

APT50GR120JD30

APT50GR120JD30

Roving Networks / Microchip Technology

IGBT MOD 1200V 84A 417W SOT227

0

FZ2400R17HP4B9HOSA2

FZ2400R17HP4B9HOSA2

IR (Infineon Technologies)

IGBT MODULE 1700V 4800A

0

DDB6U134N16RRBOSA1

DDB6U134N16RRBOSA1

IR (Infineon Technologies)

IGBT MOD 1600V 70A 500W

71

APT50GF60JU2

APT50GF60JU2

Roving Networks / Microchip Technology

IGBT MODULE 600V 75A 277W SOT227

7

FS150R12KE3BOSA1

FS150R12KE3BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 200A 700W

22

APTGT600U120D4G

APTGT600U120D4G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 900A 2500W D4

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
RFQ BOM Call Skype Email
Top