Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
FP75R12KT4PBPSA1

FP75R12KT4PBPSA1

IR (Infineon Technologies)

IGBT MOD 1200V 150A 20MW

0

FS450R12OE4PBOSA1

FS450R12OE4PBOSA1

IR (Infineon Technologies)

FS450R12 - IGBT MODULE

4

FZ3600R17HE4PHPSA1

FZ3600R17HE4PHPSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 7200A

0

FMG1G75US60L

FMG1G75US60L

IGBT, 75A, 600V, N-CHANNEL

52

FF300R12KE3HOSA1

FF300R12KE3HOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 440A 1450W

16

A1P35S12M3

A1P35S12M3

STMicroelectronics

IGBT MOD 1200V 35A 250W ACEPACK1

0

FF650R17IE4VBOSA1

FF650R17IE4VBOSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 4150W

0

APTGT150DA120G

APTGT150DA120G

Roving Networks / Microchip Technology

IGBT MODULE 1200V 220A 690W SP6

0

FD1400R12IP4DBOSA1

FD1400R12IP4DBOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 1400A 7700W

0

FF450R17ME4PBOSA1

FF450R17ME4PBOSA1

IR (Infineon Technologies)

IGBT MOD 1700V 900A 20MW

0

FZ2400R12HP4HOSA2

FZ2400R12HP4HOSA2

IR (Infineon Technologies)

IGBT MODULE 1200V 3460A

2

APTGT75TL60T3G

APTGT75TL60T3G

Roving Networks / Microchip Technology

IGBT MODULE 600V 100A 250W SP3

11

FF300R17KE3HOSA1

FF300R17KE3HOSA1

IR (Infineon Technologies)

IGBT MODULE 1700V 1450W

25

FZ800R33KL2CNOSA1

FZ800R33KL2CNOSA1

IR (Infineon Technologies)

IGBT MODULE

8

MG1250W-XBN2MM

MG1250W-XBN2MM

Wickmann / Littelfuse

IGBT MOD 1200V 75A 260W

0

FS35R12KT3BOSA1

FS35R12KT3BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 55A 210W

10

MG06400D-BN4MM

MG06400D-BN4MM

Wickmann / Littelfuse

IGBT MODULE 600V 400A 1250W D3

0

FS50R06KE3BOSA1

FS50R06KE3BOSA1

IR (Infineon Technologies)

IGBT MODULE 600V 70A 190W

0

FZ2400R17HP4HOSA2

FZ2400R17HP4HOSA2

IR (Infineon Technologies)

FZ2400R17 - IGBT MODULE

0

FS20R06W1E3B11BOMA1

FS20R06W1E3B11BOMA1

IR (Infineon Technologies)

IGBT MODULE 600V 35A 135W

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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