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Transistors - IGBTs - Modules

Image Part Number Description / PDF Quantity Rfq
6PS18012E4FG35689NWSA1

6PS18012E4FG35689NWSA1

IR (Infineon Technologies)

IGBT MODULE 1200V 729A

0
IM240M6Z1BALMA1

IM240M6Z1BALMA1

IR (Infineon Technologies)

IGBT MODULE 600V 8.9W 23SOP

240
FS50R12KE3BOSA1

FS50R12KE3BOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 75A 270W

34
FZ3600R17HP4B2BOSA2

FZ3600R17HP4B2BOSA2

IR (Infineon Technologies)

IGBT MODULE 1700V 3600A

1
FS400R07A1E3BOSA1

FS400R07A1E3BOSA1

IR (Infineon Technologies)

IGBT MOD 650V 500A 1250W

0
DF200R12W1H3B27BOMA1

DF200R12W1H3B27BOMA1

IR (Infineon Technologies)

IGBT MOD 1200V 30A 375W

0
FF450R17IE4BOSA2

FF450R17IE4BOSA2

IR (Infineon Technologies)

IGBT MOD 1700V 620A 2800W

0
FF200R12KT4HOSA1

FF200R12KT4HOSA1

IR (Infineon Technologies)

IGBT MOD 1200V 320A 1100W

51
BSM50GP120BOSA1

BSM50GP120BOSA1

IR (Infineon Technologies)

IGBT MODULE 1200V 50A

32
IXDN55N120D1

IXDN55N120D1

Wickmann / Littelfuse

IGBT MOD 1200V 100A 450W SOT227B

1867
APT70GR120J

APT70GR120J

Roving Networks / Microchip Technology

IGBT MOD 1200V 112A 543W SOT227

0
APTGT50H60T3G

APTGT50H60T3G

Roving Networks / Microchip Technology

IGBT MODULE 600V 80A 176W SP3

89
6MS24017E33W32860NOSA1

6MS24017E33W32860NOSA1

IR (Infineon Technologies)

MODULE IGBT STACK A-MS3-1

0
A1C15S12M3-F

A1C15S12M3-F

STMicroelectronics

IGBT MOD 1200V 15A ACEPACK1

6
APT35GP120JDQ2

APT35GP120JDQ2

Roving Networks / Microchip Technology

IGBT MOD 1200V 64A 284W ISOTOP

0
FS100R07N2E4BOSA1

FS100R07N2E4BOSA1

IR (Infineon Technologies)

IGBT MOD 650V 100A 335W

30
FF150R17ME3GBOSA1

FF150R17ME3GBOSA1

IR (Infineon Technologies)

IGBT MODULE

713
FB30R06W1E3BOMA1

FB30R06W1E3BOMA1

IR (Infineon Technologies)

IGBT MODULE 600V 39A 115W

0
FS35R12W1T7B11BOMA1

FS35R12W1T7B11BOMA1

IR (Infineon Technologies)

IGBT MODULE LOW POWER EASY

20
FF1200R12KE3NOSA1

FF1200R12KE3NOSA1

IR (Infineon Technologies)

IGBT MODULE 1200V 5000W

0

Transistors - IGBTs - Modules

1. Overview

Insulated Gate Bipolar Transistors (IGBTs) modules are hybrid semiconductor devices combining the high input impedance of MOSFETs with the low conduction losses of bipolar transistors. They serve as critical components in high-power switching applications, enabling efficient energy conversion in industrial, automotive, and consumer systems. Their ability to handle high voltage/current with fast switching characteristics makes them indispensable in modern power electronics.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Standard IGBT ModulesGeneral-purpose, balanced conduction/switching lossesIndustrial motor drives, HVAC systems
High-Speed IGBTsOptimized for switching frequencies >20kHzWelding inverters, induction heating
Enhanced Dynamic IGBTsReduced tail current for lower switching lossesElectric vehicle (EV) on-board chargers
Trench IGBTsVertical trench gate structure for improved efficiencySolar inverters, energy storage systems
Double-Sided Cooling ModulesThermal management with cooling on both sidesHigh-power traction systems, wind turbines

3. Structure and Composition

IGBT modules typically consist of multiple IGBT dies and freewheeling diodes mounted on a ceramic substrate (usually Al2O3 or Si3N4). Key structural elements include:

  • Chip-level integration of IGBT and diode cells
  • DBC (Direct Bonded Copper) substrate for thermal conductivity
  • Thermoplastic/epoxy encapsulation for insulation
  • Aluminum wire bonds for die interconnection
  • Integrated temperature sensors in advanced modules

4. Key Technical Specifications

ParameterDescriptionImportance
Rated Collector Current (IC)Maximum continuous operating currentDetermines power handling capability
Breakdown Voltage (VCE)Max voltage before conductionSystem voltage rating compatibility
Conduction Voltage DropVoltage loss during on-stateImpacts efficiency and thermal design
Switching Losses (Eon/Eoff)Energy loss during state transitionsDictates maximum switching frequency
Operating Temperature RangeValid junction temperature rangeReliability and lifespan factor
Isolation VoltageDielectric strength between layersSafety compliance for high-voltage systems

5. Application Areas

  • Industrial: Motor drives, CNC machines, welding equipment
  • Automotive: EV traction inverters, PHEV battery management
  • Energy: Solar PV inverters, wind turbine converters
  • Consumer: High-end home appliances with variable speed drives
  • Rail: Traction systems for high-speed trains and metro networks

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
InfineonFF600R12KE4600A/1200V, 3-level topology, 175 C rating
ON SemiconductorNVHL015AN150A/1200V, automotive qualified
Mitsubishi ElectricCM400DY-34A400A/1700V, double-sided cooling
Fuji Electric2MBI150XAA120-50150A/1200V, intelligent power module
STMicroelectronicsSTGF8NC60KD8A/600V, through-hole package

7. Selection Guidelines

Key considerations include:

  • Matching voltage/current ratings with system requirements
  • Switching frequency vs. conduction loss trade-off
  • Thermal management capabilities (Rth values)
  • Short-circuit withstand capability
  • Package dimensions and cooling interface compatibility
  • Functional safety requirements (e.g., ISO 26262 for automotive)

8. Industry Trends

Emerging trends include:

  • Transition to SiC/GaN hybrid modules for higher efficiency
  • Development of 3D packaging for reduced parasitic inductance
  • Integration of gate drivers and sensors in smart modules
  • Growing adoption in EV charging infrastructure (800V+ systems)
  • Advancements in sintering technology for die attach reliability
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