Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
CPH6341-M-TL-W Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 30V 5A CPH6	9000
NVTFS5C466NLWFTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CHANNEL 40V 51A 8WDFN	0
FDPF2710T Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 250V 25A TO220F	0
RFD14N05LSM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 50V 14A TO252AA	0
NTD5C434NT4G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 33A/160A DPAK	0
MCH3474-TL-W Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 4A SC70FL/MCPH3	12674
FDP12N60NZ Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 12A TO220-3	826
FDMS8023S Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 26A/49A 8PQFN	2441
RFD14N05SM9A Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 50V 14A TO252AA	1798
FDP65N06 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 65A TO220-3	5444000
MCH6445-TL-W Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 4A 6MCPH	2709
NVTFS4C10NWFTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 15.3A/47A 8WDFN	8381500
NVTFS6H854NTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 9.5A/44A 8WDFN	0
FDD86250 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 150V 8A/50A DPAK	0
NTLUS030N03CTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 4.5A 6UDFN	15000
FDPF20N50FT Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 500V 20A TO220F	0
NVMFS5C468NLWFAFT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 37A 5DFN	0
FCPF1300N80Z Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 800V 4A TO220F	9653000
NTF3055-100T1G-IRH1 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 3A SOT223	0
NTTFS4C08NTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 9.3A 8WDFN	2147483647

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS