Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
NVMFS5C646NLWFAFT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 20A/93A 5DFN	0
FDP51N25 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 250V 51A TO220-3	192320000
FDPF12N60NZ Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 12A TO220F	18662000
NVBG020N120SC1 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 1200V 8.6A/98A D2PAK	2160
2SJ652-1E Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 60V 28A TO220F-3SG	0
FDT86256 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 150V 1.2A/3A SOT223	0
FDMA410NZT Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 20V 9.5A 6MICROFET	5129000
NVMFS6H800NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 28A/203A 5DFN	0
FQB50N06TM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 50A D2PAK	349
NTMFS5C430NLT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 200A 5DFN	0
NVMFS5A140PLZWFT1G Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 40V 20A/140A 5DFN	0
NVTFS5124PLTAG Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 60V 2.4A 8WDFN	580
FQPF19N20C Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 200V 19A TO220F	702
FQB44N10TM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 43.5A D2PAK	556
FDD8870 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 21A/160A TO252AA	5135
NTLJS4114NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 3.6A 6WDFN	498666000
FCH125N65S3R0-F155 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 650V 24A TO247-3	328
NVMFS5C673NLWFAFT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CHANNEL 60V 50A 5DFN	0
FDMC86570LET60 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 18A/87A POWER33	8673
FDMS2734 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 250V 2.8A/14A 8MLP	8536

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS