Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
FCP13N60N Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 13A TO220-3	77
NVMFS5C460NLWFAFT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 21A/78A 5DFN	75880500
NTTFS015P03P8ZTWG Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 30V 13.4A/47.6A 8DFN	0
NDT456P Sanyo Semiconductor/ON Semiconductor	MOSFET P-CH 30V 7.5A SOT-223-4	8779
BSS123L Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 170MA SOT23-3	152540
FQU13N10LTU Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 10A IPAK	1351
FDB12N50FTM-WS Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 500V 11.5A D2PAK	21481600
5HN01SS-TL-E Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 50V 100MA SSFP3	0
NVMFS5C404NLT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 49A/352A 5DFN	0
NTMFS4937NCT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 10.2A 5DFN	6000
FDPF20N50T Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 500V 20A TO220F	26
FQU5N40TU Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 400V 3.4A IPAK	30185040
FCP380N60 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 10.2A TO220-3	3151
FDP083N15A-F102 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 150V 83A TO220-3	898
FDD8N50NZTM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 500V 6.5A DPAK	7500
FDP52N20 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 200V 52A TO220-3	0
NVHL025N65S3 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 650V 75A TO247-3	0
NTMFS5C426NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 41A/235A 5DFN	228
NVMYS011N04CTWG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 13A/35A 4LFPAK	294027000
NVTFS015N04CTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 9.4A/27A 8WDFN	363

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS