Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
FCH22N60N Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 22A TO247-3	2016450
FDP047N08-F102 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 75V 164A TO220-3	0
ATP202-TL-H Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 50A ATPAK	1564
FDP20N50 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 500V 20A TO220-3	5969
FDMC86160ET100 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 9A/43A POWER33	2118
BSS138-F085 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 50V 220MA SOT23	2568
NTLUS4C12NTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 6.8A 6UDFN	250669000
NVD5C460NLT4G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 18A/73A DPAK	0
NTD6415ANLT4G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 23A DPAK	342500
NTMYS4D1N06CLTWG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 22A/100A LFPAK4	0
NTMFS5C612NLT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 36A/235A 5DFN	0
FDMS1D4N03S Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 211A 8PQFN	5598
FQP13N06L Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 13.6A TO220-3	12458000
FDMS8333L Sanyo Semiconductor/ON Semiconductor	MOSFET N CH 40V 22A POWER 56	657294000
NTMFS6B14NT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 10A/50A 5DFN	0
FDBL0150N60 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 240A 8HPSOF	0
FDMC86102LZ Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 7A/18A 8MLP	665
NTMFS4841NHT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 8.6A/59A 5DFN	1911
NVTFS6H860NWFTAG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 8A/30A 8WDFN	4500
FDMC86520L Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 13.5A/22A 8MLP	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS