Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
FQPF10N60C Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 9.5A TO220F	8742000
FDB33N25TM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 250V 33A D2PAK	4948
NVMFS5C628NLAFT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 28A/150A 5DFN	0
FCD7N60TM-WS Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 7A DPAK	1614
NVMYS8D0N04CTWG Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 16A/49A 4LFPAK	0
FDMS86200 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 150V 9.6A/35A 8PQFN	2147483647
FQP14N30 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 300V 14.4A TO220-3	2194
NTMFS4C08NT3G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 30V 9A/52A 5DFN	0
NVD5C688NLT4G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CHANNEL 60V 17A DPAK	0
FQD3N60CTM-WS Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 2.4A DPAK	1880
NVMFS5C450NLAFT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 40V 110A 5DFN	0
FQB7N60TM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 600V 7.4A D2PAK	5235600
NVHL020N090SC1 Sanyo Semiconductor/ON Semiconductor	SICFET N-CH 900V 118A TO247-3	331
FDMT800120DC Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 120V 20A 8DLCOOL88	3661
FDD5680 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 60V 8.5A TO252	4432500
NTB082N65S3F Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 650V 40A D2PAK	11798800
NVMFS6H824NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 19A/103A 5DFN	2
FDA28N50 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 500V 28A TO3PN	216
FQD1N80TM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 800V 1A DPAK	1566
FDP42AN15A0 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 150V 5A/35A TO220-3	1470

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS